Invention Grant
- Patent Title: High aspect-ratio PN-junction and method for manufacturing the same
- Patent Title (中): 高纵横比PN结及其制造方法
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Application No.: US11027807Application Date: 2004-12-30
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Publication No.: US08378382B2Publication Date: 2013-02-19
- Inventor: Chao-I Wu , Ming Hsiu Lee
- Applicant: Chao-I Wu , Ming Hsiu Lee
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/861
Abstract:
A semiconductor device having high-aspect-ratio PN-junctions is provided. The semiconductor device includes a conducting layer. The semiconductor device further includes a plurality of first doped regions formed over the conducting layer. The sidewalls of the doped regions are doped to form PN-junctions. The semiconductor device also includes a plurality of second doped regions over the first doped regions.
Public/Granted literature
- US20060145307A1 High aspect-ratio PN-junction and method for manufacturing the same Public/Granted day:2006-07-06
Information query
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