Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program

Invention Grant

US08382895B2 Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program 有权

Title translation: 硅单晶制造方法，硅单晶，硅晶片，用于控制硅单晶的制造的装置和程序

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Patent Title: Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program
Patent Title (中): 硅单晶制造方法，硅单晶，硅晶片，用于控制硅单晶的制造的装置和程序
Application No.: US12307734

Application Date: 2007-09-27
Publication No.: US08382895B2

Publication Date: 2013-02-26
Inventor: Shinji Togawa , Toshiyuki Sato
Applicant: Shinji Togawa , Toshiyuki Sato
Applicant Address: JP Omura-Shi
Assignee: Sumco Techxiv Corporation
Current Assignee: Sumco Techxiv Corporation
Current Assignee Address: JP Omura-Shi
Agency: Holtz, Holtz Goodman & Chick, PC
Priority: JP2006-267287 20060929
International Application: PCT/JP2007/068743 WO 20070927
International Announcement: WO2008/038689 WO 20080403
Main IPC: H01L21/322
IPC: H01L21/322 ; C30B15/14 ; C30B11/00 ; C30B13/00 ; C30B21/04 ; C30B28/08

Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program

Abstract:

A method of manufacturing a silicon monocrystal by FZ method, wherein a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material. While impurities whose conductivity type is the same as that of the raw material are supplied by a gas doping method, the raw material is recrystallized by an induction-heating coil for obtaining a product-monocrystal.

Abstract(Chinese):

使用通过FZ法制造硅单晶的方法，其中使用CZ法拉出的P型或N型硅晶体用作原料。虽然通过气体掺杂法提供导电类型与原料相同的杂质，但是原料通过用于获得产物单晶的感应加热线圈重结晶。

Public/Granted literature

US20090309069A1 SILICON SINGLE CRYSTAL MANUFACTURING METHOD, SILICON SINGLE CRYSTAL, SILICON WAFER, APPARATUS FOR CONTROLLING MANUFACTURE OF SILICON SINGLE CRYSTAL, AND PROGRAM Public/Granted day:2009-12-17

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/322	.....改善其内部性能的，例如产生内部缺陷