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    POLYSILICON THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    POLYSILICON THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
    多晶硅薄膜晶体管阵列及其制造方法

    公开(公告)号：US20080115718A1

    公开(公告)日：2008-05-22

    申请号：US11866617

    申请日：2007-10-03

    Applicant: Hyun-Jae Kim ,  Sook-Young Kang ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang

    Inventor： Hyun-Jae Kim ,  Sook-Young Kang ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang

    IPC: C30B28/08 ,  B32B3/10

    CPC classification number: H01L21/02678 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T428/24273

    Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

    Abstract translation: 提供一种制造薄膜晶体管阵列面板的方法，其包括：在绝缘衬底上沉积非晶硅层; 通过使用掩模的多个激光照射将非晶硅层转化为多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述栅极绝缘层上形成多个栅极线; 在栅极线上形成第一层间绝缘层; 在所述第一层间绝缘层上形成多条数据线; 在数据线上形成第二层间绝缘层; 以及在所述第二层间绝缘层上形成多个像素电极，其中所述掩模包括以混合方式布置的多个透射区域和多个阻挡区域。

    Method for manufacturing a thermal interface material
    2.
    发明申请
    Method for manufacturing a thermal interface material 审中-公开
    制造热界面材料的方法

    公开(公告)号：US20070089667A1

    公开(公告)日：2007-04-26

    申请号：US11432565

    申请日：2006-05-10

    Applicant: Bor-Yuan Hsiao

    Inventor： Bor-Yuan Hsiao

    IPC: C30B13/00 ,  C30B21/04 ,  C30B28/08

    CPC classification number: H01L23/42 ,  C09K5/14 ,  H01L23/373 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for manufacturing a thermal interface material includes the steps of providing filling particles and a base material; forming a mixture by putting the filling particles and the base material into a container, and keeping the base material melt or in liquid state, and pressing a predetermined pressure to the mixture and mixing the mixture uniformly

    Abstract translation: 制造热界面材料的方法包括提供填充颗粒和基材的步骤; 通过将填充颗粒和基材放入容器中形成混合物，并保持基材熔化或处于液态，并将预定压力按压至混合物并均匀混合

    Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
    4.
    发明申请
    Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby 有权
    生长由其制造的单晶硅和硅晶片的方法和装置

    公开(公告)号：US20060137599A1

    公开(公告)日：2006-06-29

    申请号：US11285750

    申请日：2005-11-22

    Applicant: Hyon-Jong Cho

    Inventor： Hyon-Jong Cho

    IPC: C30B15/00 ,  C30B21/06 ,  C30B13/00 ,  C30B27/02 ,  C30B21/04 ,  C30B28/08 ,  C30B28/10 ,  C30B30/04

    CPC classification number: C30B15/203 ,  C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1088

    Abstract: Disclosed is a metod of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.

    Abstract translation: 公开了以高生长速率制造高质量硅单晶的方法。 该方法通过Czochralski法从硅熔体生长硅单晶，其中根据以下条件生长硅单晶：硅熔体具有根据等式确定的轴向温度梯度{（ΔTmax-ΔTmin）/ΔTmin}×100 < 10，其中当沿着平行于硅单晶的径向的轴测量轴向温度梯度时，DeltaTmax是硅熔体的最大轴向温度梯度，DeltaTmin是硅熔体的最小轴向温度梯度。

    Method for manufacturing crystal plate
    5.
    发明申请
    Method for manufacturing crystal plate 审中-公开
    制造水晶板的方法

    公开(公告)号：US20050188917A1

    公开(公告)日：2005-09-01

    申请号：US10791981

    申请日：2004-03-01

    Applicant: Masaaki Aoshima ,  Hiroaki Aoshima

    Inventor： Masaaki Aoshima ,  Hiroaki Aoshima

    IPC: C30B1/02 ,  C30B1/12 ,  C30B9/00 ,  C30B11/00 ,  C30B13/00 ,  C30B17/00 ,  C30B21/02 ,  C30B21/04 ,  C30B28/06 ,  C30B28/08 ,  C30B33/00

    CPC classification number: C30B1/12 ,  C30B1/023 ,  C30B33/00

    Abstract: A method for manufacturing a crystal plate, comprising the steps of adhering one of an amorphous plate and a crystalline body integrally and merging with the amorphous plate and the crystalline body; and separating the amorphous plate from the crystalline body after the crystal structure of the crystalline body is copied to the amorphous plate so that the crystal structure of the crystalline body can be copied to the amorphous plate without the crystal structure in a short time (short period), and it is easy and cheap to form a crystal plate from the amorphous plate.

    Abstract translation: 一种制造晶体板的方法，包括以下步骤：将非晶板和晶体体中的一个整体地粘合并与非晶板和晶体结合; 并且在结晶体的晶体结构被复制到非晶板之后将非晶板与晶体分离，使得晶体的晶体结构可以在短时间（短时间内）复制到无晶体结构的晶体结构 ），并且从非晶板形成晶体板是容易且便宜的。

    LASER ANNEALING APPARATUS
    7.
    发明申请
    LASER ANNEALING APPARATUS 审中-公开

    公开(公告)号：US20180308725A1

    公开(公告)日：2018-10-25

    申请号：US15795746

    申请日：2017-10-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joong-han SHIN ,  Supakit CHARNVANICHBORIKARN ,  Bong-jin KUH ,  Ki-chul KIM ,  Jae-hee LEE

    IPC: H01L21/67 ,  C30B28/08

    CPC classification number: H01L21/67115 ,  C30B28/08

    Abstract: A laser annealing apparatus includes a laser oscillating structure, an oscillator, a beam expanding telescope, a first power meter, and a second power meter. The laser oscillating structure emits a first laser beam of a first wavelength and first beam cross-section to a substrate in a chamber including an optical window. The oscillator emits a second laser beam, of a second wavelength different from the first wavelength, to the substrate. The beam expanding telescope is on an optical path for the second laser beam and expands the second laser beam to a second beam cross-section. The first and second power meters measure energy of the second laser beam and a third laser beam, generated as the second laser beam is reflected by the substrate. The first beam cross-section and the second beam cross-section may be equal.

    Mask for silicon crystallization, method for crystallizing silicon using the same and display device
    10.
    发明授权
    Mask for silicon crystallization, method for crystallizing silicon using the same and display device 有权
    用于硅结晶的掩模，使用其的结晶硅的方法和显示装置

    公开(公告)号：US07892704B2

    公开(公告)日：2011-02-22

    申请号：US11653667

    申请日：2007-01-12

    Applicant: Myung Koo Kang ,  Soong Yong Joo

    Inventor： Myung Koo Kang ,  Soong Yong Joo

    IPC: G01F9/00 ,  C30B28/08

    CPC classification number: H01L21/0268 ,  H01L21/02532 ,  H01L21/02691 ,  H01L27/1285

    Abstract: A mask for silicon crystallization capable of minimizing the number of grain boundaries in crystallized silicon, a method for crystallizing silicon using the mask, and a display device are presented. The mask includes a group of slits that are inclined at a predetermined angle with respect to a scan direction and a group of slits including slits inclined at a predetermined angle with respect to the former group of slits. The groups of slits are separated by an interval along the scan direction, and the substrate and/or mask is moved by the interval between irradiation by laser through the slits. Further, there are provided a method for crystallizing silicon using the mask and a display device. By reducing the number of grain boundaries that extend horizontally or vertically on the substrate, the invention obviates a design limitation associated with the directional anisotropy in sequential lateral solidification (SLS) technique.

    Abstract translation: 提出了能够使结晶硅中的晶界数最小化的硅结晶掩模，使用该掩模的硅结晶方法和显示装置。 掩模包括相对于扫描方向以预定角度倾斜的一组狭缝和包括相对于前一组狭缝以预定角度倾斜的狭缝的一组狭缝。 这些狭缝组沿着扫描方向分开一段间隔，并且衬底和/或掩模以激光通过狭缝照射之间的间隔移动。 此外，提供了使用掩模和显示装置使硅结晶的方法。 通过减少在衬底上水平或垂直延伸的晶界的数量，本发明避免了在顺序横向固化（SLS）技术中与方向各向异性相关的设计限制。

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