Invention Grant
- Patent Title: Thin film transistor and method of manufacturing the same
- Patent Title (中): 薄膜晶体管及其制造方法
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Application No.: US13564082Application Date: 2012-08-01
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Publication No.: US08383467B2Publication Date: 2013-02-26
- Inventor: Byung-wook Yoo , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
- Applicant: Byung-wook Yoo , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0093862 20080924
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.
Public/Granted literature
- US20120295407A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-11-22
Information query
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