To provide a semiconductor device and a method of manufacturing the same capable of suppressing, when a plurality of MIS transistors having different absolute values of threshold voltage is used, the reduction of the drive current of a MIS transistor having a greater absolute value of threshold voltage. The threshold voltage of a second nMIS transistor is greater than the threshold voltage of a first nMIS transistor and the sum of the concentration of lanthanum atom and the concentration of magnesium atom in a second nMIS high-k film included in the second nMIS transistor is lower than the sum of the concentration of lanthanum atom and the concentration of magnesium atom in a first nMIS high-k film included in the first nMIS transistor.