Invention Grant
- Patent Title: Semiconductor apparatus and method for controlling the same
- Patent Title (中): 半导体装置及其控制方法
-
Application No.: US13584519Application Date: 2012-08-13
-
Publication No.: US08384447B2Publication Date: 2013-02-26
- Inventor: Sin Hyun Jin , Sang Jin Byeon
- Applicant: Sin Hyun Jin , Sang Jin Byeon
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0093599 20090930
- Main IPC: H03L7/00
- IPC: H03L7/00

Abstract:
A semiconductor apparatus comprises a power-up signal generation section configured to generate a power-up signal, a driver configured to drive and output the power-up signal, and a main circuit block configured to perform predetermined functions in response to an output from the driver, wherein the power-up signal generation section and an input terminal of the driver are connected by a disconnectable element.
Public/Granted literature
- US20120306550A1 SEMICONDUCTOR APPARATUS AND METHOD FOR CONTROLLING THE SAME Public/Granted day:2012-12-06
Information query