发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13562380申请日: 2012-07-31
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公开(公告)号: US08385876B2公开(公告)日: 2013-02-26
- 发明人: Satoshi Goto , Tomoyuki Miyake , Masao Kondo
- 申请人: Satoshi Goto , Tomoyuki Miyake , Masao Kondo
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles and Stockbridge P.C.
- 优先权: JP2009-017997 20090129
- 主分类号: H04B1/28
- IPC分类号: H04B1/28
摘要:
In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate. Each of a TX series transistor, an RX series transistor, and an RX shunt transistor is comprised of a low voltage MISFET, while a TX shunt transistor is comprised of a high voltage MISFET. Thus, by reducing the number of serial connections of the high voltage MISFETs constituting the TX shunt transistor, the nonuniformity of the voltage amplitudes applied to the respective serially-coupled high voltage MISFETs is suppressed. As a result, the generation of high-order harmonics can be suppressed.
公开/授权文献
- US20120292703A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-11-22
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