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公开(公告)号:US08244199B2
公开(公告)日:2012-08-14
申请号:US12695192
申请日:2010-01-28
申请人: Satoshi Goto , Tomoyuki Miyake , Masao Kondo
发明人: Satoshi Goto , Tomoyuki Miyake , Masao Kondo
IPC分类号: H04B1/28
CPC分类号: H01L21/823425 , H01L21/823456 , H01L21/823462 , H01L27/088
摘要: In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate.Each of a TX series transistor, an RX series transistor, and an RX shunt transistor is comprised of a low voltage MISFET, while a TX shunt transistor is comprised of a high voltage MISFET. Thus, by reducing the number of serial connections of the high voltage MISFETs constituting the TX shunt transistor, the nonuniformity of the voltage amplitudes applied to the respective serially-coupled high voltage MISFETs is suppressed. As a result, the generation of high-order harmonics can be suppressed.
摘要翻译: 考虑到实现天线开关的成本降低,提供了即使当天线开关由在硅衬底上形成的场效应晶体管构成时,也可以尽可能地减少天线开关中产生的谐波失真的技术。 TX系列晶体管,RX系列晶体管和RX分流晶体管中的每一个由低电压MISFET组成,而TX并联晶体管由高电压MISFET组成。 因此,通过减少构成TX并联晶体管的高电压MISFET的串联连接数,可抑制施加到各串联耦合的高电压MISFET的电压幅度的不均匀性。 结果,可以抑制高次谐波的产生。
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公开(公告)号:US08385876B2
公开(公告)日:2013-02-26
申请号:US13562380
申请日:2012-07-31
申请人: Satoshi Goto , Tomoyuki Miyake , Masao Kondo
发明人: Satoshi Goto , Tomoyuki Miyake , Masao Kondo
IPC分类号: H04B1/28
CPC分类号: H01L21/823425 , H01L21/823456 , H01L21/823462 , H01L27/088
摘要: In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate. Each of a TX series transistor, an RX series transistor, and an RX shunt transistor is comprised of a low voltage MISFET, while a TX shunt transistor is comprised of a high voltage MISFET. Thus, by reducing the number of serial connections of the high voltage MISFETs constituting the TX shunt transistor, the nonuniformity of the voltage amplitudes applied to the respective serially-coupled high voltage MISFETs is suppressed. As a result, the generation of high-order harmonics can be suppressed.
摘要翻译: 考虑到实现天线开关的成本降低,提供了即使当天线开关由在硅衬底上形成的场效应晶体管构成时,也可以尽可能地减少天线开关中产生的谐波失真的技术。 TX系列晶体管,RX系列晶体管和RX分流晶体管中的每一个由低电压MISFET组成,而TX并联晶体管由高电压MISFET组成。 因此,通过减少构成TX并联晶体管的高电压MISFET的串联连接数,可抑制施加到各串联耦合的高电压MISFET的电压幅度的不均匀性。 结果,可以抑制高次谐波的产生。
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公开(公告)号:US20110294445A1
公开(公告)日:2011-12-01
申请号:US13113743
申请日:2011-05-23
申请人: Satoshi Goto , Masao Kondo
发明人: Satoshi Goto , Masao Kondo
IPC分类号: H04B1/44
摘要: A semiconductor antenna switch has an antenna terminal, a transmission terminal and a reception terminal. The antenna switch is capable of reducing harmonic distortion even though it includes field effect transistors formed over a silicon substrate. A shunt transistor including a plurality of series-connected field effect transistors is connected between he transmission terminal and a common terminal, such as a common terminal, which may be an electrical ground. Off capacitances and/or gate widths of a plurality of the series-connected field effect transistors increase monotonically in the direction from the common terminal to the transmission terminal, or equivalently, decrease monotonically in the direction from the transmission terminal to the common terminal.
摘要翻译: 半导体天线开关具有天线端子,发送端子和接收端子。 天线开关即使包括形成在硅衬底上的场效应晶体管也能够减少谐波失真。 包括多个串联连接的场效应晶体管的并联晶体管连接在传输终端和诸如可以是电接地的公共端子的公共端子之间。 多个串联场效应晶体管的关断电容和/或栅极宽度在从公共端子到发送端子的方向上单调增加,或者等效地在从发送端子到公共端子的方向上单调减小。
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公开(公告)号:US08786002B2
公开(公告)日:2014-07-22
申请号:US13151306
申请日:2011-06-02
申请人: Masao Kondo , Masatoshi Morikawa , Satoshi Goto
发明人: Masao Kondo , Masatoshi Morikawa , Satoshi Goto
IPC分类号: H01L27/108 , H01L29/94
摘要: In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and the drain region of each of a plurality of MISFETs coupled in series, a distortion compensating capacitance circuit is coupled which has a voltage dependency such that, in either of the cases where a positive voltage is applied to the drain region based on the potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, the capacitance decreases to a value smaller than that in a state where the potential of the source region and the potential of the drain region are at the same level.
摘要翻译: 在实现天线开关的成本降低方面,提供了一种能够最小化在天线开关中产生的谐波失真的技术,即使天线开关特别地由形成在硅衬底上的场效应晶体管形成。 在串联耦合的多个MISFET的源极区域和漏极区域之间,耦合失真补偿电容电路,其具有电压依赖性,使得在基于漏极区域施加正电压的情况下, 基于源极区域的电位,并且基于源极区域的电位将负电压施加到漏极区域,电容降低到比源极区域的电位和电位区域的电位小的值 漏极区域处于相同的电平。
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公开(公告)号:US08401496B2
公开(公告)日:2013-03-19
申请号:US13113743
申请日:2011-05-23
申请人: Satoshi Goto , Masao Kondo
发明人: Satoshi Goto , Masao Kondo
IPC分类号: H04B1/44
摘要: A semiconductor antenna switch has an antenna terminal, a transmission terminal and a reception terminal. The antenna switch is capable of reducing harmonic distortion even though it includes field effect transistors formed over a silicon substrate. A shunt transistor including a plurality of series-connected field effect transistors is connected between he transmission terminal and a common terminal, such as a common terminal, which may be an electrical ground. Off capacitances and/or gate widths of a plurality of the series-connected field effect transistors increase monotonically in the direction from the common terminal to the transmission terminal, or equivalently, decrease monotonically in the direction from the transmission terminal to the common terminal.
摘要翻译: 半导体天线开关具有天线端子,发送端子和接收端子。 天线开关即使包括形成在硅衬底上的场效应晶体管也能够减少谐波失真。 包括多个串联连接的场效应晶体管的并联晶体管连接在传输终端和诸如可以是电接地的公共端子的公共端子之间。 多个串联场效应晶体管的关断电容和/或栅极宽度在从公共端子到发送端子的方向上单调增加,或者等效地在从发送端子到公共端子的方向上单调减小。
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公开(公告)号:US11710920B2
公开(公告)日:2023-07-25
申请号:US17474109
申请日:2021-09-14
申请人: Takahiro Akaike , Satoshi Goto , Isao Suzuki
发明人: Takahiro Akaike , Satoshi Goto , Isao Suzuki
IPC分类号: H01R12/57 , H01R13/05 , H01R13/504 , H01R13/516 , H01R13/631 , H01R24/86
CPC分类号: H01R13/052 , H01R12/57 , H01R13/5045 , H01R13/516 , H01R13/631 , H01R24/86
摘要: The plug shell of the electrical connector includes the accommodation portion for accommodating the contact pin and the housing that holds the contact pin, the insertion port for inserting the contact pin and the housing into the accommodation portion, the lid member for closing the insertion port, and the hold mechanism for holding the lid member. The hold mechanism includes the pedestal, on which the lid member is placed, and the pair of hold pieces, which hold the lid member on the pedestal by pressing. The pair of hold pieces press the end portions of the lid member toward the pedestal, so that thereby a stress that urges the end portions to become distant from the pedestal is generated in the lid member.
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公开(公告)号:US08512589B2
公开(公告)日:2013-08-20
申请号:US13146839
申请日:2010-01-29
申请人: Hirofumi Yoshida , Yukiko Nakamura , Satoshi Goto
发明人: Hirofumi Yoshida , Yukiko Nakamura , Satoshi Goto
CPC分类号: H01F41/0246 , C01G49/0072 , C04B35/2658 , C04B35/6262 , C04B35/62645 , C04B35/62655 , C04B35/62695 , C04B35/64 , C04B2235/3208 , C04B2235/3244 , C04B2235/3251 , C04B2235/3275 , C04B2235/3418 , C04B2235/604 , C04B2235/6567 , C04B2235/72 , C04B2235/724 , C04B2235/726 , C04B2235/727 , C04B2235/78 , C04B2235/786 , C04B2235/94 , C04B2235/945 , C04B2235/963 , C04B2235/9638 , H01F1/344 , H01F1/36 , H01F3/08
摘要: Disclosed is a MnZn ferrite core comprising basic components, subcomponents and unavoidable impurities. To the basic components comprising: iron oxide (as Fe2O3): 51.0-54.5 mol %, zinc oxide (as ZnO): 8.0-12.0 mol % and manganese oxide (as MnO): remainder, are added silicon oxide (as SiO2): 50-400 mass ppm and calcium oxide (as CaO): 50-4000 ppm as subcomponents and in the unavoidable impurities, phosphorous, boron, sulfur and chlorine are respectively kept to: less than 3 mass ppm, less than 3 mass ppm, less than 5 mass ppm, and less than 10 mass ppm. The ratio of the measure specific surface area to the ideal specific surface area of the MnZn ferrite core satisfies the formula: Measured specific surface area/ideal specific surface area
摘要翻译: 公开了包含碱性成分,亚成分和不可避免的杂质的MnZn铁氧体磁心。 对于包含氧化铁(以Fe 2 O 3计):51.0-54.5mol%,氧化锌(ZnO):8.0-12.0mol%和氧化锰(作为MnO))的基本组分:余量加入氧化硅(SiO 2): 50-400质量ppm和氧化钙(作为CaO):50-4000ppm作为次要成分,在不可避免的杂质中,磷,硼,硫和氯分别保持为:小于3质量ppm,小于3质量ppm,少 大于5质量ppm,小于10质量ppm。 MnZn铁氧体磁芯的测量比表面积与理想比表面积的比例满足下式:测量比表面积/理想比表面积<1500。
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公开(公告)号:US20120070709A1
公开(公告)日:2012-03-22
申请号:US13322959
申请日:2009-06-05
申请人: Satoshi Goto , Kaoru Inoue
发明人: Satoshi Goto , Kaoru Inoue
CPC分类号: H01M4/13 , H01M10/052 , H01M10/0587 , H01M2004/021 , Y02T10/7011
摘要: The lithium secondary battery obtained by the present invention is a lithium secondary battery provided with a nonaqueous electrolyte and electrode body 80 having a positive electrode and a negative electrode, wherein a positive electrode 10 has a structure having a positive electrode active material layer 14 which contains a positive electrode active material 16, and which is supported on a positive electrode collector 12, the total pore volume within the positive electrode active material layer 14 is within a range of 0.13 cm3/g to 0.15 cm3/g, and 75% or more of the total pore volume is formed of pores 18 with a diameter of 0.3 μm or less.
摘要翻译: 通过本发明获得的锂二次电池是具有非水电解质和具有正极和负极的电极体80的锂二次电池,其中正极10具有包含正极活性物质层14的结构, 正极活性物质16,负极活性物质层14中的总细孔容积在0.13cm 3 / g〜0.15cm 3 / g的范围内,并且负极在正极集电体12上,75%以上 的总孔体积由直径为0.3μm以下的孔18形成。
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公开(公告)号:US08073238B2
公开(公告)日:2011-12-06
申请号:US12281612
申请日:2007-03-01
IPC分类号: G06K9/00
摘要: Provided is a system for reducing burden on an inspector by making it possible to evaluate the operation of a mixed injection worker which is difficult to evaluate numerically at a place remote from the mixed injection work place. Provided is a mixed injection inspection system for inspecting a mixed injection work for mixing an injection drug by an inspector different from a mixed injection worker, the mixed injection inspection system including: a mixed injection work photographing device provided in a mixed injection work place and used to photograph the mixed injection work; an inspector side mixed injection work monitor provided in a place remote from the mixed injection work place and used to display the mixed injection work photographed by the mixed injection work photographing device; an inspector side input device provided in a place remote from the mixed injection work place and used to input instructions for the worker working at the mixed injection work place; and a mixed injection worker side display means for displaying to the mixed injection worker what has been input by the inspector side input device.
摘要翻译: 提供了一种用于减轻检查员的负担的系统,其可以评估在远离混合注射工作场所的地方难以评估的混合注射工作者的操作。 提供了一种混合注射检查系统,用于检查由混合注射工作者不同的检查员混合注射药物的混合注射检查系统,该混合注射检查系统包括:混合注射工作摄影装置,其设置在混合注射工作场所中并使用 拍摄混合注射工作; 在远离混合注射工作场所的位置设置检查员侧混合注入工作监视器,用于显示由混合注射工作拍摄装置拍摄的混合注射工作; 检查器侧输入装置,设置在远离混合注射工作场所的位置,并用于输入在混合注射工作场所工作的工人的指令; 以及混合注射工人侧显示装置,用于向混合注射工作者显示由检查者侧输入装置输入的内容。
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公开(公告)号:US20100085015A1
公开(公告)日:2010-04-08
申请号:US12532204
申请日:2009-01-20
申请人: Hiroshi Hamaguchi , Satoshi Goto
发明人: Hiroshi Hamaguchi , Satoshi Goto
IPC分类号: H02J7/00
CPC分类号: H01M10/44 , H01M10/0525 , H01M10/484 , H02J7/0075 , Y02E60/122 , Y02T10/7011
摘要: A battery system (SV1) comprises a lithium ion secondary battery (101), charge and discharge control means (S2, S6-S8), and internal resistance detecting means (M1). The charge and discharge control means comprises: mode control means including increasing mode control means (S2) for increasing the internal resistance of the lithium ion secondary battery and decreasing mode control means (S8) for decreasing the internal resistance; and mode selecting means (S6, S7) for selecting the decreasing mode control means (S8) or the increasing mode control means (S2) when a level of the internal resistance is estimated by the internal resistance detecting means.
摘要翻译: 电池系统(SV1)包括锂离子二次电池(101),充放电控制装置(S2,S6-S8)和内部电阻检测装置(M1)。 充放电控制装置包括:模式控制装置,包括用于增加锂离子二次电池的内阻的增加模式控制装置(S2)和用于降低内阻的减少模式控制装置(S8) 以及当通过内部电阻检测装置估计内部电阻的电平时用于选择减小模式控制装置(S8)或增加模式控制装置(S2)的模式选择装置(S6,S7)。
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