发明授权
US08390124B2 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings
有权
半导体装置及半导体装置的制造方法，包括用于连接第一和第二布线的布线孔和开关孔
- 专利标题： Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings
- 专利标题（中）： 半导体装置及半导体装置的制造方法，包括用于连接第一和第二布线的布线孔和开关孔
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申请号： US12656728申请日： 2010-02-16
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公开(公告)号： US08390124B2公开(公告)日： 2013-03-05
- 发明人: Naoya Inoue , Yoshihiro Hayashi , Kishou Kaneko
- 申请人： Naoya Inoue , Yoshihiro Hayashi , Kishou Kaneko
- 申请人地址： JP Kawasaki-Shi, Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-Shi, Kanagawa
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2009/34117 20090217
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L29/32 ; H01L29/74 ; H01L31/111 ; H01L29/423 ; H01L29/49
摘要：
Provided is a semiconductor device including a substrate, and a first wiring layer, a second wiring layer, and a switch via formed on the substrate. The first wiring layer has first wiring formed therein and the second wiring layer has second wiring formed therein. The switch via connects the first wiring and the second wiring. The switch via includes at least at its bottom a switch element including a resistance change layer. A resistance value of the resistance change layer changes according to a history of an electric field applied thereto.
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