发明授权
US08391017B2 Thin-film capacitor structures embedded in semiconductor packages and methods of making
有权
半导体封装中嵌入的薄膜电容器结构和制造方法
- 专利标题： Thin-film capacitor structures embedded in semiconductor packages and methods of making
- 专利标题（中）： 半导体封装中嵌入的薄膜电容器结构和制造方法
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申请号： US12763433申请日： 2010-04-20
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公开(公告)号： US08391017B2公开(公告)日： 2013-03-05
- 发明人: David Ross McGregor , Cheong-Wo Hunter Chan , Lynne E. Dellis , Fuhan Liu , Deepukumar M. Nair , Venkatesh Sundaram
- 申请人： David Ross McGregor , Cheong-Wo Hunter Chan , Lynne E. Dellis , Fuhan Liu , Deepukumar M. Nair , Venkatesh Sundaram
- 申请人地址： US GA Atlanta
- 专利权人： Georgia Tech Research Corporation
- 当前专利权人： Georgia Tech Research Corporation
- 当前专利权人地址： US GA Atlanta
- 代理机构： Thomas | Horstemeyer, LLP
- 主分类号： H01L29/86
- IPC分类号： H01L29/86 ; H01L21/768 ; H01L21/50 ; H01L23/522
摘要：
Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.
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