发明授权
- 专利标题: Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
- 专利标题(中): 用于提升硅单晶的硅玻璃坩埚及其制造方法
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申请号: US12626713申请日: 2009-11-27
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公开(公告)号: US08394198B2公开(公告)日: 2013-03-12
- 发明人: Masaki Morikawa , Jun Furukawa , Satoshi Kudo
- 申请人: Masaki Morikawa , Jun Furukawa , Satoshi Kudo
- 申请人地址: JP Akita-Shi
- 专利权人: Japan Super Quartz Corporation
- 当前专利权人: Japan Super Quartz Corporation
- 当前专利权人地址: JP Akita-Shi
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP2008-305329 20081128
- 主分类号: C30B15/02
- IPC分类号: C30B15/02
摘要:
A silica glass crucible for pulling up a silicon single crystal including a wall part, a corner part and a bottom part is provided with an outer layer formed from an opaque silica glass layer which includes many bubbles, and an inner layer formed from a transparent silica glass layer which substantially does not include bubbles, wherein at least one part of an inner surface of the wall part and the corner part being an uneven surface formed with multiple damaged parts having a depth of 50 μm or more and 450 μm or less, and wherein a region among the inner surface of the bottom part within a certain range from the center of the bottom part being a smooth surface which does is substantially not formed with damage.
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