发明授权
- 专利标题: Method for fabricating semiconductor lighting chip
- 专利标题(中): 制造半导体照明芯片的方法
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申请号: US13216248申请日: 2011-08-24
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公开(公告)号: US08394653B2公开(公告)日: 2013-03-12
- 发明人: Po-Min Tu , Shih-Cheng Huang , Ya-Wen Lin , Chia-Hung Huang , Shun-Kuei Yang
- 申请人: Po-Min Tu , Shih-Cheng Huang , Ya-Wen Lin , Chia-Hung Huang , Shun-Kuei Yang
- 申请人地址: TW Hsinchu Hsien
- 专利权人: Advanced Optoelectronic Technology, Inc.
- 当前专利权人: Advanced Optoelectronic Technology, Inc.
- 当前专利权人地址: TW Hsinchu Hsien
- 代理机构: Altis Law Group, Inc.
- 优先权: CN201010606545 20101228
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure.
公开/授权文献
- US20120164764A1 METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP 公开/授权日:2012-06-28
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