发明授权
- 专利标题： Isolation in CMOSFET devices utilizing buried air bags
- 专利标题（中）： 使用埋入式气囊的CMOSFET器件中的隔离
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申请号： US13283031申请日： 2011-10-27
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公开(公告)号： US08395217B1公开(公告)日： 2013-03-12
- 发明人: Kangguo Cheng , Joseph Ervin , Jeffrey B. Johnson , Pranita Kulkarni , Kevin McStay , Paul C. Parries , Chengwen Pei , Geng Wang , Yanli Zhang
- 申请人： Kangguo Cheng , Joseph Ervin , Jeffrey B. Johnson , Pranita Kulkarni , Kevin McStay , Paul C. Parries , Chengwen Pei , Geng Wang , Yanli Zhang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Alexander Viderman; Joseph Petrokaitis; Matthew C. Zehrer
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/84
摘要：
A semiconductor device structure having an isolation region and method of manufacturing the same are provided. The semiconductor device structure includes a silicon-on-insulator (SOI) substrate. A plurality of gates is formed on the SOI substrate. The semiconductor device structure further includes trenches having sidewalls, formed between each of the plurality of gates. The semiconductor device structure further includes an epitaxial lateral growth layer formed in the trenches. The epitaxial lateral growth layer is grown laterally from the opposing sidewalls of the trenches, so that the epitaxial lateral growth layer encloses a portion of the trenches extended into the SOI substrate. The epitaxial lateral growth layer is formed in such way that it includes an air gap region overlying a buried dielectric layer of the SOI substrate.
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