Invention Grant
- Patent Title: Switches with bias resistors for even voltage distribution
- Patent Title (中): 具有偏置电阻的开关,用于均匀的电压分配
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Application No.: US12615107Application Date: 2009-11-09
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Publication No.: US08395435B2Publication Date: 2013-03-12
- Inventor: Marco Cassia , Jeremy D. Dunworth
- Applicant: Marco Cassia , Jeremy D. Dunworth
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM, Incorporated
- Current Assignee: QUALCOMM, Incorporated
- Current Assignee Address: US CA San Diego
- Agent Ramin Mobarhan
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
Switches with connected bulk for improved switching performance and bias resistors for even voltage distribution to improve reliability are described. In an exemplary design, a switch may include a plurality of transistors coupled in a stack and at least one resistor coupled to at least one intermediate node in the stack. The transistors may have (i) a first voltage applied to a first transistor in the stack and (ii) a second voltage that is lower than the first voltage applied to bulk nodes of the transistors. The resistor(s) may maintain matching bias conditions for the transistors when they are turned off. In one exemplary design, one resistor may be coupled between the source and drain of each transistor. In another exemplary design, one resistor may be coupled between each intermediate node and the first voltage. The resistor(s) may maintain the source of each transistor at the first voltage.
Public/Granted literature
- US20110025408A1 SWITCHES WITH BIAS RESISTORS FOR EVEN VOLTAGE DISTRIBUTION Public/Granted day:2011-02-03
Information query
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