发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US13035134申请日: 2011-02-25
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公开(公告)号: US08395922B2公开(公告)日: 2013-03-12
- 发明人: Mitsuhiro Noguchi , Kenji Sawamura , Takeshi Kamigaichi , Katsuaki Isobe
- 申请人: Mitsuhiro Noguchi , Kenji Sawamura , Takeshi Kamigaichi , Katsuaki Isobe
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-061153 20100317; JP2010-143666 20100624
- 主分类号: G11C5/06
- IPC分类号: G11C5/06
摘要:
According to one embodiment, a semiconductor memory device includes a memory cell array, a first sense amplifier circuit, and a second sense amplifier circuit. The memory cell array includes a plurality of first memory cell units, a plurality of second memory cell units, a plurality of first interconnects, and a plurality of second interconnects. The first sense amplifier circuit is connected to the plurality of first interconnects. The second sense amplifier circuit is connected to the plurality of second interconnects. Heights of upper surfaces of interconnects are equal. At least one of a width of each of the plurality of second interconnects along a second direction perpendicular to the first direction and a thickness of each of the plurality of second interconnects along a third direction perpendicular to the first direction and the second direction is set smaller than each of the plurality of first interconnects, and the first sense amplifier circuit and the second sense amplifier circuit are disposed to face each other across the memory cell array.
公开/授权文献
- US20110228583A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2011-09-22