Materials and methods of forming controlled void

Invention Grant

US08399349B2 Materials and methods of forming controlled void 有权

Title translation: 形成受控空隙的材料和方法

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Patent Title: Materials and methods of forming controlled void
Patent Title (中): 形成受控空隙的材料和方法
Application No.: US11693707

Application Date: 2007-03-29
Publication No.: US08399349B2

Publication Date: 2013-03-19
Inventor: Raymond Nicholas Vrtis , Dingjun Wu , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Eugene Joseph Karwacki, Jr. , Aaron Scott Lukas
Applicant: Raymond Nicholas Vrtis , Dingjun Wu , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Eugene Joseph Karwacki, Jr. , Aaron Scott Lukas
Applicant Address: US PA Allentown
Assignee: Air Products and Chemicals, Inc.
Current Assignee: Air Products and Chemicals, Inc.
Current Assignee Address: US PA Allentown
Agent Lina Yang
Main IPC: H01L21/4763
IPC: H01L21/4763

Materials and methods of forming controlled void

Abstract:

The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

Abstract(Chinese):

本发明是一种在衬底内形成气隙的方法，该方法包括：提供衬底; 通过沉积至少一种牺牲材料前体沉积牺牲材料; 沉积复合层; 去除复合层中的致孔剂材料以形成多孔层并使分层的基底与去除介质接触，以基本上去除牺牲材料并在基底内提供气隙; 其中所述至少一种牺牲材料前体选自：有机致孔剂; 硅和极性溶剂可溶性金属氧化物及其混合物。

Public/Granted literature

US20080038934A1 MATERIALS AND METHODS OF FORMING CONTROLLED VOID Public/Granted day:2008-02-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）