公开(公告)号：US20090054674A1

公开(公告)日：2009-02-26

申请号：US12262879

申请日：2008-10-31

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, JR.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, JR.

IPC分类号： C07F7/18 ,  C23C16/56

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善 沉积膜。

公开(公告)号：US07404990B2

公开(公告)日：2008-07-29

申请号：US10295568

申请日：2002-11-14

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Eugene Joseph Karwacki, Jr.

IPC分类号： B05D3/06 ,  C08F2/34 ,  C08F2/52 ,  C08J7/18 ,  C08J7/16 ,  C23C16/00 ,  C23C16/50 ,  C23C16/56

CPC分类号： C23C16/56 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的某些实施方案中，提供了一种低温方法，以除去多相膜内至少一部分成孔相，从而形成多孔膜。 可以在非氧化性气氛中通过暴露于至少一种能量源（优选紫外光源）除去成孔相。

公开(公告)号：US08137764B2

公开(公告)日：2012-03-20

申请号：US10842503

申请日：2004-05-11

申请人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

发明人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

IPC分类号： C23C10/06 ,  C23C16/24

CPC分类号： C03C11/00 ,  C03C3/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/31695 ,  Y10T428/31663

摘要： A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.

摘要翻译： 本文公开了一种通过调节混合物内的有机基团如甲基的量来制备具有增强的机械性能的低介电常数有机硅酸盐（OSG）的化学气相沉积方法。 在本发明的一个实施方案中，OSG膜由包含第一含硅前体的混合物沉积，该第一含硅前体包含每Si原子3至4个Si-O键，0至1个选自Si -H，Si-Br和Si-Cl键，并且不具有Si-C键，并且每个Si原子包含至少一个Si-C键的第二含硅前体。 在本发明的另一个实施方案中，OSG膜由包含不对称含硅前体的混合物沉积。 在任一实施方案中，混合物还可含有孔原体前体以提供多孔OSG膜。

公开(公告)号：US07468290B2

公开(公告)日：2008-12-23

申请号：US10624357

申请日：2003-07-21

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

IPC分类号： H01L51/40

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善 沉积膜。

公开(公告)号：US08399349B2

公开(公告)日：2013-03-19

申请号：US11693707

申请日：2007-03-29

申请人： Raymond Nicholas Vrtis ,  Dingjun Wu ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Eugene Joseph Karwacki, Jr. ,  Aaron Scott Lukas

发明人： Raymond Nicholas Vrtis ,  Dingjun Wu ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Eugene Joseph Karwacki, Jr. ,  Aaron Scott Lukas

IPC分类号： H01L21/4763

CPC分类号： H01L21/764 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02172 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/30604 ,  H01L21/31695 ,  H01L21/423 ,  H01L21/7682 ,  H01L2221/1047

摘要： The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

摘要翻译： 本发明是一种在衬底内形成气隙的方法，该方法包括：提供衬底; 通过沉积至少一种牺牲材料前体沉积牺牲材料; 沉积复合层; 去除复合层中的致孔剂材料以形成多孔层并使分层的基底与去除介质接触，以基本上去除牺牲材料并在基底内提供气隙; 其中所述至少一种牺牲材料前体选自：有机致孔剂; 硅和极性溶剂可溶性金属氧化物及其混合物。

公开(公告)号：US07098149B2

公开(公告)日：2006-08-29

申请号：US10379466

申请日：2003-03-04

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善 沉积膜。

公开(公告)号：US07074489B2

公开(公告)日：2006-07-11

申请号：US10317807

申请日：2002-12-12

申请人： Mark Leonard O'Neill ,  Aaron Scott Lukas ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Brian K. Peterson

发明人： Mark Leonard O'Neill ,  Aaron Scott Lukas ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Brian K. Peterson

IPC分类号： B32B9/04

CPC分类号： C03C3/04 ,  C03C3/045 ,  C03C14/00 ,  C03C14/008 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L21/31629 ,  H01L21/31633 ,  Y10T428/31663

摘要： Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. In one embodiment there is provided a CVD method that includes: providing a substrate within a vacuum chamber; introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.

摘要翻译： 有机氟硅酸盐玻璃膜含有有机物质和无机氟，不含大量的碳氟化合物种类。 优选的膜由下式表示：＆lt;＆lt;＆gt;＆lt;＆lt; 其中v + w + x + y + z = 100％，v为10至35原子％，w为10至65原子％，y为10至50原子％，x为1至30原子 ％，z为0.1〜15原子％，x / z任选大于0.25，其中基本上没有氟与碳结合。 在一个实施例中，提供了一种CVD方法，其包括：在真空室内提供衬底; 向真空室中引入包含供氟气体，供氧气体和选自有机硅烷和有机硅氧烷的至少一种前体气体的气态试剂; 并向腔室中的气态试剂施加能量以诱导气态试剂的反应并在衬底上形成膜。

公开(公告)号：US07932188B2

公开(公告)日：2011-04-26

申请号：US12262879

申请日：2008-10-31

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善 沉积膜。

公开(公告)号：US07470454B2

公开(公告)日：2008-12-30

申请号：US10624356

申请日：2003-07-21

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Eugene Joseph Karwacki, Jr.

IPC分类号： B05D5/00 ,  B05D3/06 ,  B05D3/02 ,  C23C16/18 ,  C23C16/40 ,  C23C16/42 ,  C23C16/48 ,  C23C16/517 ,  C23C16/56 ,  C08J7/16 ,  H01L21/3105 ,  H01L21/4757

CPC分类号： C23C16/56 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的某些实施方案中，提供了一种低温方法，以去除复合膜内至少一部分成孔材料，从而形成多孔膜。 成孔材料可以在非氧化性气氛中暴露于至少一种能量源，优选紫外光源下去除。