发明授权
US08399862B2 Ion implanting apparatus and ion implanting method 有权
离子注入装置和离子注入方法

Ion implanting apparatus and ion implanting method
摘要:
When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.
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