发明授权
- 专利标题: Ion implanting apparatus and ion implanting method
- 专利标题(中): 离子注入装置和离子注入方法
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申请号: US12521019申请日: 2007-12-20
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公开(公告)号: US08399862B2公开(公告)日: 2013-03-19
- 发明人: Tadahiro Ohmi , Tetsuya Goto , Akinobu Teramoto , Takaaki Matsuoka
- 申请人: Tadahiro Ohmi , Tetsuya Goto , Akinobu Teramoto , Takaaki Matsuoka
- 申请人地址: JP Miyagi JP Tokyo
- 专利权人: National University Corporation Tohoku University,Tokyo Electron Limited
- 当前专利权人: National University Corporation Tohoku University,Tokyo Electron Limited
- 当前专利权人地址: JP Miyagi JP Tokyo
- 代理机构: Pearne & Gordon LLP
- 优先权: JP2006-348315 20061225
- 国际申请: PCT/JP2007/074480 WO 20071220
- 国际公布: WO2008/078636 WO 20080703
- 主分类号: G21K5/10
- IPC分类号: G21K5/10 ; H01S3/00 ; H05H3/02 ; A61N5/00 ; G21G5/00 ; G21G4/00
摘要:
When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.
公开/授权文献
- US20100025821A1 ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD 公开/授权日:2010-02-04
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