公开(公告)号：US20100025821A1

公开(公告)日：2010-02-04

申请号：US12521019

申请日：2007-12-20

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Akinobu Teramoto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Akinobu Teramoto ,  Takaaki Matsuoka

IPC分类号： H01L29/30 ,  C23C16/00 ,  H01L21/265

CPC分类号： H01L21/265 ,  H01J37/3222 ,  H01J37/32412 ,  H01J37/32706 ,  H01J2237/20 ,  H01J2237/26 ,  H01L21/26513 ,  H01L21/2658 ,  H01L29/30 ,  H01L29/7833

摘要： When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.

摘要翻译： 当将带正电荷的离子注入目标衬底时，目标衬底上可能会发生充电损伤。 为了抑制当注入正电荷的离子时从目标衬底发射的二次电子引起的充电，导电构件安装在面向目标衬底并相对于高频电接地的位置。 此外，可以通过以脉冲模式控制施加到目标衬底的RF功率来减小在目标衬底中产生的场强。

公开(公告)号：US08399862B2

公开(公告)日：2013-03-19

申请号：US12521019

申请日：2007-12-20

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Akinobu Teramoto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Akinobu Teramoto ,  Takaaki Matsuoka

IPC分类号： G21K5/10 ,  H01S3/00 ,  H05H3/02 ,  A61N5/00 ,  G21G5/00 ,  G21G4/00

CPC分类号： H01L21/265 ,  H01J37/3222 ,  H01J37/32412 ,  H01J37/32706 ,  H01J2237/20 ,  H01J2237/26 ,  H01L21/26513 ,  H01L21/2658 ,  H01L29/30 ,  H01L29/7833

摘要： When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.

摘要翻译： 当将带正电荷的离子注入目标衬底时，目标衬底上可能会发生充电损伤。 为了抑制当注入正电荷的离子时从目标衬底发射的二次电子引起的充电，导电构件安装在面向目标衬底并相对于高频电接地的位置。 此外，可以通过以脉冲模式控制施加到目标衬底的RF功率来减小在目标衬底中产生的场强。

公开(公告)号：US20100216300A1

公开(公告)日：2010-08-26

申请号：US12675289

申请日：2008-08-07

申请人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/28

CPC分类号： H01L21/02164 ,  C23C16/511 ,  H01J37/32192 ,  H01L21/02274 ,  H01L21/31055 ,  H01L21/31116

摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.

摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜 半导体衬底的表面。

公开(公告)号：US08497214B2

公开(公告)日：2013-07-30

申请号：US12675289

申请日：2008-08-07

申请人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/302

CPC分类号： H01L21/02164 ,  C23C16/511 ,  H01J37/32192 ,  H01L21/02274 ,  H01L21/31055 ,  H01L21/31116

摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.

摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜 半导体衬底的表面。

公开(公告)号：US20090107521A1

公开(公告)日：2009-04-30

申请号：US12296989

申请日：2007-04-11

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Jiro Yamanaka ,  Nobutaka Mizutani ,  Osamu Nakamura ,  Takaaki Matsuoka ,  Ryoichi Ohkura

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Jiro Yamanaka ,  Nobutaka Mizutani ,  Osamu Nakamura ,  Takaaki Matsuoka ,  Ryoichi Ohkura

IPC分类号： B08B3/00 ,  F16L11/04 ,  F16L11/20

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： By adding a perfluoromonomer to PVDF being a fluororesin to soften it, the oxygen permeability can be significantly reduced and a flexible fluororesin tube can be obtained. The oxygen permeability can also be reduced by providing a nylon tube as an outer layer. The tube is used between a chemical solution or ultrapure water feeder and a chemical solution or ultrapure water utilizing apparatus such as a cleaning apparatus or a wet etching apparatus.

摘要翻译： 通过向作为氟树脂的PVDF添加全氟单体使其软化，可以显着降低透氧性，并且可以获得柔性的氟树脂管。 也可以通过提供尼龙管作为外层来降低透氧性。 该管用于化学溶液或超纯水给水器和化学溶液或超纯水利用设备如清洁设备或湿蚀刻设备。

公开(公告)号：US20100275981A1

公开(公告)日：2010-11-04

申请号：US12809447

申请日：2008-12-12

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kouji Tanaka

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kouji Tanaka

IPC分类号： H01L31/04 ,  H01L31/18

CPC分类号： H01L31/18 ,  C23C16/24 ,  C23C16/511 ,  H01L31/028 ,  H01L31/04 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1816 ,  Y02E10/547 ,  Y02P70/521

摘要： An apparatus and method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber 10 which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit 40 which supplies plasma excitation gas to a plasma excitation region in the chamber 10, a pressure regulation unit 70 which regulates pressure in the chamber 10, a second gas supply unit 50 which supplies raw gas to a plasma diffusion region in the chamber 10, a microwave application unit 20 which applies microwaves into the chamber 10, and a bias voltage application unit 60 which selects and applies a substrate bias voltage to the substrate W according to the type of gas.

摘要翻译： 一种用于制造光电转换元件的装置和方法以及光电转换元件，该装置和方法能够高效地用微波等离子体形成膜，防止氧气混合，并减少缺陷数量。 本发明提供一种通过使用微波等离子体CVD在基板上形成半导体叠层膜的光电转换元件制造装置100。 该装置包括：腔室10，其是容纳基底的封闭空间，其上安装有用于薄膜形成的被检体基底;第一气体供给单元40，其向等离子体激发区域提供等离子体激发气体; 调节室10内的压力的压力调节单元70，向室10中的等离子体扩散区域供给原料气体的第二气体供给单元50，将微波施加到室10中的微波施加单元20以及偏置电压 应用单元60，其根据气体的类型选择并施加衬底偏置电压到衬底W.

公开(公告)号：US20080187747A1

公开(公告)日：2008-08-07

申请号：US11883421

申请日：2006-01-20

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kazumasa Kawase

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kazumasa Kawase

IPC分类号： H01L21/3205 ,  H01L21/31

CPC分类号： H01L21/02332 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/3185 ,  H01L29/518 ,  Y10T428/265

摘要： A dielectric film wherein N in the state of an Si3=≡N bonding is present in a concentration of 3 atomic % or more in the surface side of an oxide film and also is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film can achieve the prevention of the B diffusion and also the prevention of the deterioration of the NBTI resistance in combination. When the Ar/N2 radical nitridation is used, it is difficult for the resultant oxide film to satisfy the condition wherein N in the above bonding state is present in a concentration of 3 atomic % or more in the surface side of an oxide film and simultaneously is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film, whereas, the above distribution of the N concentration can be achieved by using any of the gas combinations of Xe/N2, Kr/N2, Ar/NH3, Xe/NH3, Kr/NH3, Ar/N2/H2, Xe/N2/H2 and Kr/N2/H2.

摘要翻译： 在氧化物膜的表面侧以3原子％以上的浓度存在Si 3 N 3≡N键的状态下的N的电介质膜，其浓度为 在氧化膜的界面侧为0.1原子％以下，可以防止B扩散，并且可以防止NBTI电阻的组合劣化。 当使用Ar / N 2自由基氮化时，所得到的氧化物膜难以满足在上述接合状态下的N以3原子％以上的浓度存在的条件 氧化膜的表面侧，同时在氧化膜的界面侧以0.1原子％以下的浓度存在，而N浓度的上述分布可以通过使用Xe / N / 2，Kr / N 2，Ar / NH 3，Xe / NH 3，Kr / NH 2， 2/3/2/2/2/2/2/2 和Kr / N 2 H 2 / H 2。

公开(公告)号：US20110186425A1

公开(公告)日：2011-08-04

申请号：US12999985

申请日：2009-06-17

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoru Kawakami ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoru Kawakami ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3423

摘要： A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular reference region; disposing a plurality of thin and long targets to face the corresponding thin and long deposition regions such that sputtering particles emitted from the plurality of thin and long targets are incident on the corresponding thin and long deposition regions; disposing a semiconductor wafer, while overlapping with the circular reference region; confining a plasma generated by a magnetron discharge in the vicinity of the targets, and emitting the sputtering particles from the targets; and rotating the semiconductor wafer at a predetermined rotation speed by using a normal line passing through the center of the circular reference region as a rotation central axis, to deposit a film on a surface of the semiconductor wafer.

摘要翻译： 溅射方法包括设置多个薄且长的沉积区域，使得薄且长的沉积区域各自在第一方向上与具有与半导体晶片的直径相等的直径的圆形参考区域交叉，并且以预定间隔布置在 第二方向垂直于第一方向; 设置所述多个薄且长的沉积区域中的一个，使得其沿着所述第一方向延伸的侧面的一侧穿过所述圆形参考区域的大致中心; 设置多个薄且长的沉积区域中的另一个，使得其沿着第一方向延伸的侧面的一侧通过圆形参考区域的实质边缘; 设置多个薄和长沉积区域的宽度，使得通过将第二方向上的多个薄沉积区域和长沉积区域的宽度求和而获得的值基本上等于圆形参考区域的半径; 设置多个薄且长的靶以面对相应的薄和长沉积区域，使得从多个薄且长的靶发射的溅射颗粒入射到相应的薄和长的沉积区域; 在与圆形参考区域重叠的同时设置半导体晶片; 限制在靶附近由磁控管放电产生的等离子体，并从靶中发射溅射粒子; 并且通过使用通过圆形基准区域的中心的法线作为旋转中心轴以预定转速旋转半导体晶片，以在半导体晶片的表面上沉积膜。

公开(公告)号：US20100126848A1

公开(公告)日：2010-05-27

申请号：US12089331

申请日：2006-10-06

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.

摘要翻译： 提供一种磁控溅射装置，通过增加目标上的瞬时侵蚀密度可以提高成膜速度，通过随时间移动侵蚀区域可以延长目标寿命，以防止目标局部磨损，并实现均匀的磨损。 多个板状磁铁安装在柱状旋转轴的周围，柱状旋转轴旋转，从而在靶上形成高密度的侵蚀区域，以增加成膜速度，并且随着柱状体的旋转而使侵蚀区域移动 旋转轴，从而均匀地佩戴目标。

公开(公告)号：US20100059368A1

公开(公告)日：2010-03-11

申请号：US12594676

申请日：2008-04-04

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3455

摘要： Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

摘要翻译： 提供了一种磁控溅射装置，其增加靶上的瞬时等离子体密度以提高成膜速率。 磁控管溅射装置包括待加工的基板，安装成面向基板的靶材和安装在穿过靶材的基板相对侧的旋转磁体。 在磁控管溅射装置中，在目标表面上形成等离子体回路。 根据旋转磁体的旋转，等离子体回路产生，移动并沿旋转磁体的轴线方向消失。