- 专利标题： Non-volatile magnetic memory element with graded layer
-
申请号： US13253918申请日： 2011-10-05
-
公开(公告)号： US08399943B2公开(公告)日： 2013-03-19
- 发明人: Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- 申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- 申请人地址： US CA Fremont
- 专利权人： Avalanche Technology, Inc.
- 当前专利权人： Avalanche Technology, Inc.
- 当前专利权人地址： US CA Fremont
- 代理机构： IPxLAW Group LLP
- 代理商 Maryam Imam
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; G11C11/00
摘要：
A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.
公开/授权文献
- US20120026785A1 Non-Volatile Magnetic Memory Element with Graded Layer 公开/授权日：2012-02-02
信息查询
IPC分类:
