发明授权
US08409952B2 Method of forming an electronic device including forming a charge storage element in a trench of a workpiece
有权
形成电子器件的方法，包括在工件的沟槽中形成电荷存储元件
- 专利标题： Method of forming an electronic device including forming a charge storage element in a trench of a workpiece
- 专利标题（中）： 形成电子器件的方法，包括在工件的沟槽中形成电荷存储元件
-
申请号： US12102488申请日： 2008-04-14
-
公开(公告)号： US08409952B2公开(公告)日： 2013-04-02
- 发明人: Suketu Arun Parikh , Olov B. Karlsson , Yun Sun , Shankar Sinha , Timothy Thurgate
- 申请人： Suketu Arun Parikh , Olov B. Karlsson , Yun Sun , Shankar Sinha , Timothy Thurgate
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of forming an electronic device including forming a first trench in a workpiece including a substrate, the first trench having side walls and a bottom surface extending for a width between the side walls and forming a charge-storage layer along the side walls and bottom surface of the first trench. The method further includes implanting ions within the substrate underlying the bottom surface of the first trench to form an implant region and annealing the implant region, wherein after annealing, the implant region extends the width of the bottom surface and along a portion of the side walls.