发明授权
- 专利标题： Semiconductor device and DC-DC converter
- 专利标题（中）： 半导体器件和DC-DC转换器
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申请号： US12408056申请日： 2009-03-20
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公开(公告)号： US08410546B2公开(公告)日： 2013-04-02
- 发明人: Yusuke Kawaguchi , Miwako Akiyama , Yoshihiro Yamaguchi , Nobuyuki Sato , Shigeaki Hayase
- 申请人： Yusuke Kawaguchi , Miwako Akiyama , Yoshihiro Yamaguchi , Nobuyuki Sato , Shigeaki Hayase
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Patterson & Sheridan, LLP
- 优先权： JP2008-085359 20080328; JP2009-028910 20090210
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94
摘要：
A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion.
公开/授权文献
- US20090242977A1 SEMICONDUCTOR DEVICE AND DC-DC CONVERTER 公开/授权日：2009-10-01
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