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公开(公告)号：US09649829B2
公开(公告)日：2017-05-16
申请号：US14235861
申请日：2012-08-01
Applicant: Isao Manabe , Mitsutaka Sakamoto , Kozo Takahashi , Toshiya Ieki , Nobuyuki Sato , Shinji Takauchi
Inventor： Isao Manabe , Mitsutaka Sakamoto , Kozo Takahashi , Toshiya Ieki , Nobuyuki Sato , Shinji Takauchi
CPC classification number: B32B27/325 , B32B27/08 , B32B2307/50 , B32B2307/51 , B32B2307/538 , B32B2307/738 , B32B2307/746 , C08F32/00 , C08J5/18 , C08J2365/00 , C08K5/098 , C08L45/00 , Y10T428/24355 , Y10T428/2495 , Y10T428/2848 , Y10T428/31913
Abstract: The present invention provides a film for forming which exhibits both excellent dimensional stability in processing and excellent formability as well as excellent appearance of surfaces and can thus be suitably applied to a variety of forming members through forming and used in forming decoration applications. Provided is a film for forming comprising a cyclic olefin-based resin as a main component, wherein the storage modulus at 120° C. is 101 MPa to 3,000 MPa and the storage modulus at 170° C. is 100 MPa or less.
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公开(公告)号：US09615166B2
公开(公告)日：2017-04-04
申请号：US14406036
申请日：2012-06-06
Applicant: Hiroaki Watanabe , Nobuyuki Sato , Takeru Miki , Toshiya Kosaka , Eitaro Unno , Takahiro Kudo , Yoshihiko Takeda
Inventor： Hiroaki Watanabe , Nobuyuki Sato , Takeru Miki , Toshiya Kosaka , Eitaro Unno , Takahiro Kudo , Yoshihiko Takeda
CPC classification number: H04R1/323 , G10K11/004 , H04R1/02 , H04R1/025 , H04R1/026 , H04R2201/021 , H04R2201/025 , H04R2499/13
Abstract: Provided is an electronic machine that is provided with a speaker and that enables a direction of the speaker to be appropriately and arbitrarily changed. The electronic machine includes a speaker unit, housings, and a rotating device. The speaker unit is supported by the housing. The rotating device includes a first rotating device configured to rotate the speaker unit with respect to the housings about a direction intersecting with an axis of the housings serving as a rotational axis, and a second rotating device configured to rotate the speaker unit with respect to the housings about the axis of the housings serving as a rotational axis.
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3.发明授权公开(公告)号：US09163305B2
公开(公告)日：2015-10-20
申请号：US13994366
申请日：2011-12-13
Applicant: Hideyuki Takahashi , Nobuyuki Sato , Kazuki Nakazato , Masato Iri
Inventor： Hideyuki Takahashi , Nobuyuki Sato , Kazuki Nakazato , Masato Iri
IPC: C23C2/02 , C21D1/74 , C21D1/76 , C21D9/56 , C23C2/28 , F27B9/28 , F27D7/06 , B32B15/01 , C22C38/02 , C22C38/04 , C22C38/06
CPC classification number: C23C2/02 , B32B15/013 , C21D1/74 , C21D1/76 , C21D9/56 , C22C38/02 , C22C38/04 , C22C38/06 , C23C2/28 , F27B9/28 , F27D7/06
Abstract: An annealing and manufacturing method of hot-dip galvanized steel strips includes suppression of oxide formation of elements in the steel strips. An annealing furnace includes a heating zone, a soaking zone, and a cooling zone in which a portion of gas is introduced to decrease the gas dew point. A gas suction rate Qo1 in a portion of the cooling zone, a gas suction rate Qo2 in an upper portion and a gas feed rate Qi2 in a lower portion of the soaking zone, a gas feed rate Qi1 in a connection part between the soaking and cooling zones, an atmosphere gas supply rate Qf1 into the cooling zone and its subsequent zone, an atmosphere gas supply rate Qf2 into the soaking zone, an internal volume Vs of the soaking zone, and an average furnace temperature Ts of the soaking zone satisfy relationships including 0.3×Qf1
Abstract translation: 热镀锌钢带的退火和制造方法包括抑制钢带中元素的氧化物形成。 退火炉包括加热区，均热区和冷却区，其中引入一部分气体以降低气体露点。 在冷却区域的一部分中的吸气率Qo1，上部的吸气量Qo2和均热区的下部的气体供给速度Qi2，在均热和 冷却区，向冷却区及其后续区域的气氛气体供给量Qf1，进入均热区域的气氛气体供给量Qf2，均热区域的内部体积Vs，均热区域的平均炉温Ts满足关系 包括0.3×Qf1
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公开(公告)号：US08849090B2
公开(公告)日：2014-09-30
申请号：US12447480
申请日：2007-10-12
Applicant: Ryota Kosakai , Katsutoshi Aiki , Nobuyuki Sato , Hiroki Nagahama , Masatoshi Sase , Yutaka Yoneda
Inventor： Ryota Kosakai , Katsutoshi Aiki , Nobuyuki Sato , Hiroki Nagahama , Masatoshi Sase , Yutaka Yoneda
CPC classification number: H04N9/735 , G11B27/005 , G11B27/031 , G11B31/006 , H04N5/232 , H04N5/23232 , H04N5/23245 , H04N5/23293 , H04N5/378 , H04N5/77 , H04N5/772 , H04N5/783 , H04N5/91 , H04N7/0105 , H04N7/0127 , H04N9/045 , H04N9/69 , H04N9/7904 , H04N9/80 , H04N9/87
Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed. In a reproducing state, raw data are read from the recording device 111 at a low screen rate according to a display performance of the display section 112 and the raw data that have been read are processed are processed by the pre-processing circuit 202 and the camera signal processing circuit 203 and a reproduced image is displayed by the display section 112.
Abstract translation: 在高速图像捕获状态下，不需要相机信号处理电路来以高屏幕速率但以常规屏幕速率执行信号处理。 在高速图像拍摄模式中，从图像传感器101接收的240fps的原始数据通过转换处理部分201和记录装置控制电路210记录在记录装置111上。已被抽取和尺寸转换的原始数据 通过预处理电路202被提供给相机信号处理电路203，并且正在捕获的图像被显示在已经执行了相机处理的信号的显示部分112上。 在再现状态下，根据显示部分112的显示性能，并且已经被读取的原始数据被处理前处理电路202处理，以低屏幕速率从记录装置111读出原始数据， 相机信号处理电路203和再现图像由显示部分112显示。
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公开(公告)号：US20140170379A1
公开(公告)日：2014-06-19
申请号：US14235861
申请日：2012-08-01
Applicant: Isao Manabe , Mitsutaka Sakamoto , Kozo Takahashi , Toshiya Ieki , Nobuyuki Sato , Shinji Takauchi
Inventor： Isao Manabe , Mitsutaka Sakamoto , Kozo Takahashi , Toshiya Ieki , Nobuyuki Sato , Shinji Takauchi
CPC classification number: B32B27/325 , B32B27/08 , B32B2307/50 , B32B2307/51 , B32B2307/538 , B32B2307/738 , B32B2307/746 , C08F32/00 , C08J5/18 , C08J2365/00 , C08K5/098 , C08L45/00 , Y10T428/24355 , Y10T428/2495 , Y10T428/2848 , Y10T428/31913
Abstract: The present invention provides a film for forming which exhibits both excellent dimensional stability in processing and excellent formability as well as excellent appearance of surfaces and can thus be suitably applied to a variety of forming members through forming and used in forming decoration applications. Provided is a film for forming comprising a cyclic olefin-based resin as a main component, wherein the storage modulus at 120° C. is 101 MPa to 3,000 MPa and the storage modulus at 170° C. is 100 MPa or less.
Abstract translation: 本发明提供一种成型用薄膜，其在加工中具有优异的尺寸稳定性和优异的成形性以及优异的表面外观，因此可以通过成型适用于各种成型构件并用于成型加工。 提供一种包含环状烯烃类树脂作为主要成分的成型用膜，其中120℃下的储能模量为101MPa〜3000MPa，在170℃下的储能模量为100MPa以下。
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Patent Agency Ranking
公开(公告)号：US20130069150A1
公开(公告)日：2013-03-21
申请号：US13614791
申请日：2012-09-13
Applicant: Takeru MATSUOKA , Nobuyuki Sato , Shigeaki Hayase , Kentaro Ichinoseki
Inventor： Takeru MATSUOKA , Nobuyuki Sato , Shigeaki Hayase , Kentaro Ichinoseki
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/7813 , H01L29/1095 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66734
Abstract: According to one embodiment, a semiconductor device includes a semiconductor layer; a plurality of semiconductor regions; second semiconductor region; a first electrode being positioned between the plurality of first semiconductor regions, the first electrode contacting with the semiconductor layer, each of the plurality of first semiconductor regions, and the second semiconductor region via a first insulating film; a second electrode provided below the first electrode, and contacting with the semiconductor layer via a second insulating film; an insulating layer interposed between the first electrode and the second electrode; a third electrode electrically connected to the semiconductor layer; and a fourth electrode connected to the second semiconductor region. The first electrode has a first portion and a pair of second portions. And each of the pair of second portions is provided along the first insulating film.
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7.发明授权公开(公告)号：US08237812B2
公开(公告)日：2012-08-07
申请号：US12664412
申请日：2008-06-05
Applicant: Mitsuaki Kita , Nobuyuki Sato , Masashi Wakatsuki , Shinya Ishibashi , Jun Minakuti , Takahiro Koyama
Inventor： Mitsuaki Kita , Nobuyuki Sato , Masashi Wakatsuki , Shinya Ishibashi , Jun Minakuti , Takahiro Koyama
CPC classification number: H04N5/35572 , H04N5/2355 , H04N5/361 , H04N5/367
Abstract: Imaging signal obtained through exposure for divided exposure times is A/D converted to digital imaging signal. Dark current component is subtracted from the digital imaging signal. The result of subtraction is accumulated and stored in a first memory. Next, exposure for divided exposure times is performed with the imaging device shielded from light. The obtained imaging signal is A/D converted to digital imaging signal. Dark current component is subtracted from the digital imaging signal. The result of subtraction is accumulated and stored sequentially in a second memory. The digital imaging signal stored in the second memory is subtracted from the digital imaging signal stored in the first memory. Then the result of subtraction is output. The word length allocated to one pixel in the first and second memories is longer than the word length of one A/D converted pixel.
Abstract translation: 通过曝光获得的分割曝光时间的成像信号被A / D转换为数字成像信号。 从数字成像信号中减去暗电流分量。 减法的结果被累积并存储在第一存储器中。 接下来，用遮光的成像装置进行分割曝光时间的曝光。 所获得的成像信号被A / D转换成数字成像信号。 从数字成像信号中减去暗电流分量。 减法的结果累积并顺序存储在第二存储器中。 存储在第二存储器中的数字成像信号从存储在第一存储器中的数字成像信号中减去。 然后输出减法的结果。 分配给第一和第二存储器中的一个像素的字长比一个A / D转换像素的字长长。
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公开(公告)号：USRE43166E1
公开(公告)日：2012-02-07
申请号：US12613119
申请日：2009-11-05
Applicant: Nobuyuki Sato , Masahiko Shimada , Hiroshi Oda
Inventor： Nobuyuki Sato , Masahiko Shimada , Hiroshi Oda
CPC classification number: C12Y402/02004 , C12N9/88
Abstract: Nucleic acid sequences coding for the chondroitinase ABC gene and isolated chondroitinase ABE protein produced in a host cell transformed with a nucleic acid vector directing the expression of a nucleotide sequence coding for chondroitinase ABE protein described. Chondroitinase ABC prepared by chemical synthesis also described. Monoclonal and polyclonal antibodies which are specifically reactive with chondroitinase ABC protein are disclosed. The isolated chondroitinase ABC can be used in methods of treating intervertebral disc replacement, promoting neurite regeneration, and detecting galactosaminoglycans.
Abstract translation: 编码软骨素酶ABC基因的核酸序列和分离的软骨素酶ABE蛋白质在用指导编码软骨素酶ABE蛋白质的核苷酸序列的表达的核酸载体转化的宿主细胞中产生。 通过化学合成制备的软骨素酶ABC也有描述。 公开了与软骨素酶ABC蛋白特异性反应的单克隆和多克隆抗体。 分离的软骨素酶ABC可用于治疗椎间盘置换，促进神经突再生和检测半乳糖胺聚糖的方法。
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公开(公告)号：US20100061707A1
公开(公告)日：2010-03-11
申请号：US12447480
申请日：2007-10-12
Applicant: Ryota Kosakai , Katsutoshi Aiki , Nobuyuki Sato , Hiroki Nagahama , Masatoshi Sase , Yutaka Yoneda
Inventor： Ryota Kosakai , Katsutoshi Aiki , Nobuyuki Sato , Hiroki Nagahama , Masatoshi Sase , Yutaka Yoneda
CPC classification number: H04N9/735 , G11B27/005 , G11B27/031 , G11B31/006 , H04N5/232 , H04N5/23232 , H04N5/23245 , H04N5/23293 , H04N5/378 , H04N5/77 , H04N5/772 , H04N5/783 , H04N5/91 , H04N7/0105 , H04N7/0127 , H04N9/045 , H04N9/69 , H04N9/7904 , H04N9/80 , H04N9/87
Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed. In a reproducing state, raw data are read from the recording device 111 at a low screen rate according to a display performance of the display section 112 and the raw data that have been read are processed are processed by the pre-processing circuit 202 and the camera signal processing circuit 203 and a reproduced image is displayed by the display section 112.
Abstract translation: 在高速图像捕获状态下，不需要相机信号处理电路来以高屏幕速率但以常规屏幕速率执行信号处理。 在高速图像拍摄模式中，从图像传感器101接收的240fps的原始数据通过转换处理部分201和记录装置控制电路210记录在记录装置111上。已被抽取和尺寸转换的原始数据 通过预处理电路202被提供给相机信号处理电路203，并且正在捕获的图像被显示在已经执行了相机处理的信号的显示部分112上。 在再现状态下，根据显示部分112的显示性能，并且已经被读取的原始数据被处理前处理电路202处理，以低屏幕速率从记录装置111读出原始数据， 相机信号处理电路203和再现图像由显示部分112显示。
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公开(公告)号：US20090242977A1
公开(公告)日：2009-10-01
申请号：US12408056
申请日：2009-03-20
Applicant: Yusuke KAWAGUCHI , Miwako Akiyama , Yoshihiro Yamaguchi , Nobuyuki Sato , Shigeaki Hayase
Inventor： Yusuke KAWAGUCHI , Miwako Akiyama , Yoshihiro Yamaguchi , Nobuyuki Sato , Shigeaki Hayase
IPC: H01L29/78
CPC classification number: H01L29/7811 , H01L29/0696 , H01L29/42368 , H01L29/66666 , H01L29/7803 , H01L29/7813 , H01L29/7827 , H02M3/1588 , Y02B70/1466
Abstract: A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion.
Abstract translation: 半导体器件包括：第一导电类型的半导体衬底; 设置在所述半导体衬底中的半导体区域; 形成在半导体区域中的第一沟槽; 形成在所述半导体衬底中的第二沟槽; 设置在所述第一沟槽中的沟槽栅电极; 以及设置在第二沟槽中的沟槽源电极。 沟槽源电极的形状像条纹，并通过其纵向部分连接到源电极。
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