发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13082464申请日: 2011-04-08
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公开(公告)号: US08411480B2公开(公告)日: 2013-04-02
- 发明人: Shuhei Nagatsuka , Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue
- 申请人: Shuhei Nagatsuka , Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2010-095196 20100416
- 主分类号: G11C5/06
- IPC分类号: G11C5/06
摘要:
An object is to provide a semiconductor device having a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor. The memory cell includes a writing transistor, a reading transistor, and a selecting transistor. Using a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and holding data for a long time can be provided.
公开/授权文献
- US20110255325A1 SEMICONDUCTOR DEVICE 公开/授权日:2011-10-20
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