发明授权
US08415218B2 Atomic layer deposition epitaxial silicon growth for TFT flash memory cell
有权
用于TFT闪存单元的原子层沉积外延硅生长
- 专利标题： Atomic layer deposition epitaxial silicon growth for TFT flash memory cell
- 专利标题（中）： 用于TFT闪存单元的原子层沉积外延硅生长
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申请号： US12259128申请日： 2008-10-27
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公开(公告)号： US08415218B2公开(公告)日： 2013-04-09
- 发明人: Fumitake Mieno
- 申请人： Fumitake Mieno
- 申请人地址： CN Shanghai CN Beijing
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人地址： CN Shanghai CN Beijing
- 代理机构： Kilpatrick Townsend & Stockton
- 优先权： CN200810040288 20080702
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/20 ; H01L21/36 ; H01L21/00 ; C23C16/24 ; H01L29/06 ; H01L47/02 ; H01L29/04 ; H01L29/15 ; H01L31/036 ; H01L29/80 ; H01L29/76 ; H01L29/788 ; H01L21/70
摘要：
A method of growing an epitaxial silicon layer is provided. The method comprising providing a substrate including an oxygen-terminated silicon surface and forming a first hydrogen-terminated silicon surface on the oxygen-terminated silicon surface. Additionally, the method includes forming a second hydrogen-terminated silicon surface on the first hydrogen-terminated silicon surface through atomic-layer deposition (ALD) epitaxy from SiH4 thermal cracking radical assisted by Ar flow and flash lamp annealing continuously. The second hydrogen-terminated silicon surface is capable of being added one or more layer of silicon through ALD epitaxy from SiH4 thermal cracking radical assisted by Ar flow and flash lamp annealing continuously. In one embodiment, the method is applied for making devices with thin-film transistor (TFT) floating gate memory cell structures which is capable for three-dimensional integration.