发明授权
- 专利标题: Dense pitch bulk FinFET process by selective EPI and etch
- 专利标题(中): 通过选择性EPI和蚀刻的密集体积FinFET工艺
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申请号: US13103569申请日: 2011-05-09
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公开(公告)号: US08420471B2公开(公告)日: 2013-04-16
- 发明人: Brent A. Anderson , Edward J. Nowak
- 申请人: Brent A. Anderson , Edward J. Nowak
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Gibb & Riley, LLC
- 代理商 Richard M. Kotulak, Esq.
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/8234
摘要:
Disclosed is a method of forming a pair of transistors by epitaxially growing a pair of silicon fins on a silicon germanium fin on a bulk wafer. In one embodiment a gate conductor between the fins is isolated from a conductor layer on the bulk wafer so a front gate may be formed. In another embodiment a gate conductor between the fins contacts a conductor layer on the bulk wafer so a back gate may be formed. In yet another embodiment both of the previous structures are simultaneously formed on the same bulk wafer. The method allow the pairs of transistors to be formed with a variety of features.