发明授权
US08421061B2 Memory element and semiconductor device including the memory element
有权
存储元件和包括存储元件的半导体器件
- 专利标题： Memory element and semiconductor device including the memory element
- 专利标题（中）： 存储元件和包括存储元件的半导体器件
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申请号： US11713751申请日： 2007-03-05
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公开(公告)号： US08421061B2公开(公告)日： 2013-04-16
- 发明人: Mikio Yukawa , Nozomu Sugisawa
- 申请人： Mikio Yukawa , Nozomu Sugisawa
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2006-066527 20060310
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L51/00
摘要：
It is an object of the present invention to reduce variations in behavior of each memory element. In addition, it is another object of the present invention to obtain a semiconductor device, on which the memory element is mounted, which is superior in terms of performance and reliability. A memory element of the present invention includes in its structure a first conductive layer; a semiconductor layer; an organic compound layer; and a second conductive layer, where the semiconductor layer and the organic compound layer are interposed between the first conductive layer and the second conductive layer, and the semiconductor layer is formed to be in contact with the first conductive layer and/or the second conductive layer. With such a structure, variations in behavior of each memory element are reduced.
公开/授权文献
- US20080017849A1 Memory element and semiconductor device 公开/授权日：2008-01-24
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