发明授权
- 专利标题： Insulating substrate for semiconductor apparatus, semiconductor apparatus, and method for manufacturing semiconductor apparatus
- 专利标题（中）： 半导体装置绝缘基板，半导体装置及半导体装置的制造方法
-
申请号： US12674560申请日： 2008-09-08
-
公开(公告)号： US08421076B2公开(公告)日： 2013-04-16
- 发明人: Michiko Takei , Shin Matsumoto , Kazuhide Tomiyasu , Yasumori Fukushima , Yutaka Takafuji
- 申请人： Michiko Takei , Shin Matsumoto , Kazuhide Tomiyasu , Yasumori Fukushima , Yutaka Takafuji
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： JP2007-338329 20071227
- 国际申请： PCT/JP2008/066190 WO 20080908
- 国际公布： WO2009/084284 WO 20090709
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.
公开/授权文献
信息查询
IPC分类:
