公开(公告)号：US08816917B2

公开(公告)日：2014-08-26

申请号：US13979371

申请日：2012-01-12

申请人： Mikio Ueno ,  Ryuichi Taira ,  Shin Matsumoto

发明人： Mikio Ueno ,  Ryuichi Taira ,  Shin Matsumoto

IPC分类号： H01Q1/32 ,  H01Q1/36 ,  H01Q5/00 ,  H01Q11/08

CPC分类号： H01Q1/32 ,  H01Q1/3275 ,  H01Q5/378 ,  H01Q11/08

摘要： A low profile antenna device for use in a vehicle comprises a base unit, and an antenna unit. The antenna unit is supported on the base unit, and is provided with a first helical unit on the side near to the base unit, and a second helical unit on the side far from the base unit. The second helical unit is configured such that the surface area is larger per unit length than that of the first helical unit.

摘要翻译： 用于车辆的低剖面天线装置包括基座单元和天线单元。 天线单元被支撑在基座单元上，并且在靠近基座单元的一侧设置有第一螺旋单元，并且在远离基座单元的一侧设置有第二螺旋单元。 第二螺旋单元构造成使得每单位长度的表面积比第一螺旋单元的面积大。

公开(公告)号：US08488871B2

公开(公告)日：2013-07-16

申请号：US13002349

申请日：2009-06-29

申请人： Shin Matsumoto ,  Takahiro Ikeda ,  Hirokazu Karasawa

发明人： Shin Matsumoto ,  Takahiro Ikeda ,  Hirokazu Karasawa

IPC分类号： G06K9/00 ,  A61K49/00

CPC分类号： G01N29/069 ,  G01N29/262 ,  G01N2291/106 ,  G01N2291/267

摘要： A three-dimensional ultrasonic inspection apparatus includes: an ultrasonic transducer disposed m×n piezoelectric vibrators in a matrix; a signal processing device to receive, detect an echo, and generate a three-dimensional image data by processing an electric signal of the echo detected; and a display processing device to display a result of processing the three-dimensional image data generated by the signal processing device, wherein the display processing device includes a peak detecting unit to detect a first peak and a second peak of an intensity distribution of the three-dimensional image data in a depth (z) direction, a joint portion image creation unit to create a three-dimensional image of the joined area by mapping z direction distance of the first peak and the second peak to x-y plane, a determination unit to determine whether the joined area is sound or not, and a display unit to display the three-dimensional image and the determination result of the joined area.

摘要翻译： 一种三维超声波检查装置包括：以矩阵形式设置m×n个压电振动器的超声波换能器; 信号处理装置，用于通过处理检测到的回波的电信号来接收，检测回波并产生三维图像数据; 以及显示处理装置，用于显示由信号处理装置生成的三维图像数据的处理结果，其中显示处理装置包括峰值检测单元，用于检测三维图像的强度分布的第一峰值和第二峰值 在深度（z）方向上的三维图像数据，联合部分图像创建单元，通过将第一峰值和第二峰值的z方向距离映射到xy平面来创建连接区域的三维图像，确定单元 确定接合区域是否是声音;以及显示单元，用于显示接合区域的三维图像和确定结果。

公开(公告)号：US20110102429A1

公开(公告)日：2011-05-05

申请号：US13002349

申请日：2009-06-29

申请人： Shin Matsumoto ,  Takahiro Ikeda ,  Hirokazu Karasawa

发明人： Shin Matsumoto ,  Takahiro Ikeda ,  Hirokazu Karasawa

IPC分类号： G06T15/00 ,  G06K9/00

CPC分类号： G01N29/069 ,  G01N29/262 ,  G01N2291/106 ,  G01N2291/267

摘要： A three-dimensional ultrasonic inspection apparatus includes: an ultrasonic transducer disposed m×n piezoelectric vibrators in a matrix; a signal processing device to receive, detect an echo, and generate a three-dimensional image data by processing an electric signal of the echo detected; and a display processing device to display a result of processing the three-dimensional image data generated by the signal processing device, wherein the display processing device includes a peak detecting unit to detect a first peak and a second peak of an intensity distribution of the three-dimensional image data in a depth (z) direction, a joint portion image creation unit to create a three-dimensional image of the joined area by mapping z direction distance of the first peak and the second peak to x-y plane, a determination unit to determine whether the joined area is sound or not, and a display unit to display the three-dimensional image and the determination result of the joined area.

摘要翻译： 一种三维超声波检查装置包括：以矩阵形式设置m×n个压电振动器的超声波换能器; 信号处理装置，用于通过处理检测到的回波的电信号来接收，检测回波并产生三维图像数据; 以及显示处理装置，用于显示由信号处理装置生成的三维图像数据的处理结果，其中显示处理装置包括峰值检测单元，用于检测三维图像的强度分布的第一峰值和第二峰值 在深度（z）方向上的三维图像数据，联合部分图像创建单元，通过将第一峰值和第二峰值的z方向距离映射到xy平面来创建连接区域的三维图像，确定单元 确定接合区域是否是声音;以及显示单元，用于显示接合区域的三维图像和确定结果。

公开(公告)号：US20100283104A1

公开(公告)日：2010-11-11

申请号：US12746317

申请日：2008-11-25

申请人： Kenshi Tada ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Kazuo Nakagawa ,  Shin Matsumoto

发明人： Kenshi Tada ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Kazuo Nakagawa ,  Shin Matsumoto

IPC分类号： H01L29/786 ,  H01L21/762 ,  H01L21/28

CPC分类号： H01L27/1266 ,  H01L21/263 ,  H01L27/1214 ,  H01L29/6675 ,  H01L29/7836

摘要： An element portion forming step includes an insulating film forming step of forming an insulating film on a surface of a base layer, a conductive layer forming step of uniformly forming a conductive layer on a surface of the insulating film, and an electrode forming step of patterning the conductive layer to form an electrode. A delamination layer forming step of ion implanting a delamination material into the base layer to form a delamination layer is performed before the electrode forming step.

摘要翻译： 元件部分形成步骤包括在基底层的表面上形成绝缘膜的绝缘膜形成步骤，在绝缘膜的表面上均匀地形成导电层的导电层形成步骤和图案化的电极形成步骤 导电层形成电极。 在电极形成步骤之前，进行将分层材料离子注入基层以形成分层的分层形成步骤。

公开(公告)号：US20100207212A1

公开(公告)日：2010-08-19

申请号：US12682221

申请日：2008-10-21

申请人： Michiko Takei ,  Shin Matsumoto ,  Yasumori Fukushima ,  Yutaka Takafuji

发明人： Michiko Takei ,  Shin Matsumoto ,  Yasumori Fukushima ,  Yutaka Takafuji

IPC分类号： H01L29/786 ,  H01L21/762 ,  H01L29/30

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To prevent bubbles from occurring along a transfer interface, the present method includes the steps of: forming a peeled layer 10 in a transferred member 6 by implanting a peeled-layer forming substance into the transferred member 6; forming a planar surface in the transferred member 6 by planarizing a surface of the transferred member 6; forming a composite including the transferred member 6 and a glass substrate 2 by directly combining the transferred member 6 via the planar surface with a surface of the glass substrate 2; and peeling a part of the transferred member 6 from the composite along the peeled layer 10 serving as an interface by heat-treating the composite.

摘要翻译： 为了防止沿着转移界面发生气泡，本方法包括以下步骤：通过将剥离层形成物质注入到被转印元件6中，在转印元件6中形成剥离层10; 通过使转印部件6的表面平坦化，在被转印部件6中形成平面; 通过经由平面表面直接将转印部件6与玻璃基板2的表面直接组合，形成包括转印部件6和玻璃基板2的复合体; 以及通过热处理复合材料，沿着作为界面的剥离层10将复合材料的一部分从复合材料剥离。

公开(公告)号：US08811721B2

公开(公告)日：2014-08-19

申请号：US13513685

申请日：2010-11-29

申请人： Shin Matsumoto ,  Takahiro Ikeda

发明人： Shin Matsumoto ,  Takahiro Ikeda

IPC分类号： G06K9/00 ,  A61K49/00 ,  G01N29/06

CPC分类号： G01N29/0672 ,  G01N29/069 ,  G01N29/44 ,  G01N2291/106 ,  G01N2291/267 ,  G01N2291/2672

摘要： A three-dimensional ultrasonic inspection apparatus 10 can make increased inspection accuracy in comparison to the conventional apparatus and includes: an ultrasonic transducer 11 disposed m×n piezoelectric vibrators in a matrix; a signal processing unit 17 to receive, detect an echo, and generate a three-dimensional image data by processing an electric signal of the echo detected; a peak detecting element 51, 52 to detect a first peak and a second peak of an intensity distribution of the three-dimensional image data in a depth (z) direction; a joint portion image creation unit 36 to create a three-dimensional image of the joined area 15 by mapping z direction distance of the first peak and the second peak to x-y plane; a determination unit 37 to determine whether the joined area 15 is sound by two-step determination; and a display unit 38 to display the three-dimensional image and the determination result, of the joined area 15.

摘要翻译： 与以往的装置相比，三维超声波检查装置10能够提高检查精度，包括：超声波传感器11，以矩阵形式设置m×n个压电振动器; 信号处理单元17，用于通过处理检测到的回波的电信号来接收，检测回波并产生三维图像数据; 检测深度（z）方向上的三维图像数据的强度分布的第一峰值和第二峰值的峰值检测元件51,52; 关节部分图像创建单元36，通过将第一峰值和第二峰值的z方向距离映射到x-y平面来创建连接区域15的三维图像; 确定单元37，通过两步确定来确定接合区域15是否是声音; 以及显示单元38，用于显示接合区域15的三维图像和确定结果。

公开(公告)号：US20130037816A1

公开(公告)日：2013-02-14

申请号：US13520271

申请日：2010-12-02

申请人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kenshi Tada ,  Shin Matsumoto

发明人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kenshi Tada ,  Shin Matsumoto

IPC分类号： H01L29/786 ,  H01L21/50

CPC分类号： H01L27/1266 ,  H01L21/76898 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1251 ,  H01L29/7833 ,  H01L2224/08225 ,  H01L2224/80896

摘要： A semiconductor device (130) includes: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90) bonded to the bonding substrate (100), the semiconductor element (90) including semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on a side of the semiconductor element main body (50) facing the bonding substrate (100), and each of the underlying layers (51-54) including an insulating layer and a circuit pattern in the insulating layer, wherein an end of the semiconductor element (90) facing the thin film element (80) is provided in a stepped form so that the closer to the bonding substrate the underlying layers arc, the farther ends of the underlying layers facing the thin film element protrude, the end of the semiconductor element (90) is covered with a resin layer (120), and the thin film element (80) is connected to the semiconductor element main body (50) via a connection line (121a) provided on the resin layer (120).

摘要翻译： 半导体器件（130）包括：接合衬底（100）; 形成在所述接合基板（100）上的薄膜元件（80）。 以及与所述接合基板（100）接合的半导体元件（90），所述半导体元件（90）包括半导体元件主体（50）和层叠在所述半导体元件主体（50）侧的多个下层（51-54） 主体（50），以及在绝缘层中包括绝缘层和电路图案的每个下层（51-54），其中半导体元件（90）的面向薄膜的端部 元件（80）以阶梯形式设置，使得更靠近接合基底的下面的层弧形，面向薄膜元件的下面的层的更远的端部突出，半导体元件（90）的端部覆盖有 树脂层（120），并且薄膜元件（80）经由设置在树脂层（120）上的连接线（121a）连接到半导体元件主体（50）。

公开(公告)号：US20130009302A1

公开(公告)日：2013-01-10

申请号：US13520255

申请日：2010-12-02

申请人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kenshi Tada ,  Shin Matsumoto

发明人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kenshi Tada ,  Shin Matsumoto

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L27/1266 ,  C09J7/387 ,  G02F1/13454 ,  H01L25/0655 ,  H01L27/1229 ,  H01L27/124 ,  H01L27/1251 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device (130) including: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90a) bonded to the bonding substrate (100), the semiconductor element including a semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on a side of the semiconductor element main body facing the bonding substrate (100), wherein the underlying layer (54) closest to the bonding substrate (100) includes an extended section (E) formed by extending the circuit pattern toward the thin film element (80), a resin layer (120) is provided between the thin film element (80) and the semiconductor element (90a), and the thin film element (80) is connected to the semiconductor element main body (50) via a connection line (121a) provided on the resin layer (120), the extended section (E), and the circuit patterns.

摘要翻译： 一种半导体器件（130），包括：接合衬底（100）; 形成在所述接合基板（100）上的薄膜元件（80）。 以及与接合基板（100）接合的半导体元件（90a），所述半导体元件包括半导体元件主体（50）和层叠在所述半导体元件主体的面对侧的多个下层（51-54） 所述接合基板（100），其中最靠近所述接合基板（100）的下层（54）包括通过将所述电路图案朝向所述薄膜元件（80）延伸而形成的延伸部（E），树脂层（120） 设置在薄膜元件（80）和半导体元件（90a）之间，并且薄膜元件（80）经由设置在树脂层上的连接线（121a）连接到半导体元件主体（50） 120），扩展部分（E）和电路图案。

公开(公告)号：US20110241174A1

公开(公告)日：2011-10-06

申请号：US13139988

申请日：2009-08-21

申请人： Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kazuo Nakagawa ,  Yutaka Takafuji

发明人： Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kazuo Nakagawa ,  Yutaka Takafuji

IPC分类号： H01L21/301 ,  H01L29/06

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78636

摘要： Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.

摘要翻译： 提供一种其中执行以下步骤的半导体器件制造方法; 在基体层上形成元素的至少一部分的步骤，形成剥离层的步骤，形成平坦化膜的步骤; 通过在分离区域分离基体层而形成模具的步骤; 通过将该模具接合在平坦化膜上而将芯片接合到基板的步骤; 以及沿剥离层剥离和去除基体层的一部分的步骤。 在成型模具的步骤之前，形成在平坦化膜的表面上开口的槽，使得至少一部分分离区域包含在槽的底表面上，并且形成模具，使得 模具具有多边形外形，其中通过形成凹槽来执行所有内角都是钝的。

公开(公告)号：US20100244185A1

公开(公告)日：2010-09-30

申请号：US12742932

申请日：2008-10-22

申请人： Yutaka Takafuji ,  Yasumori Fukushima ,  Kenshi Tada ,  Kazuo Nakagawa ,  Shin Matsumoto ,  Kazuhide Tomiyasu

发明人： Yutaka Takafuji ,  Yasumori Fukushima ,  Kenshi Tada ,  Kazuo Nakagawa ,  Shin Matsumoto ,  Kazuhide Tomiyasu

IPC分类号： H01L27/12 ,  H01L21/762 ,  H01L21/86

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1251 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/66772

摘要： The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics.The present invention is a production method of a semiconductor device including single-crystal semiconductor thin film-including single-crystal semiconductor elements on an insulating substrate, the production method including the successive steps of a first heat treatment step and a second heat treatment step, wherein in the first heat treatment step, a single-crystal semiconductor thin film undergoes a heat treatment at lower than 650° C., the single-crystal semiconductor thin film containing a doped impurity and including at least part of each one of single-crystal semiconductor elements, the single-crystal semiconductor thin film bonded to an insulating substrate, and in the second heat treatment step, the single-crystal semiconductor thin film undergoes a heat treatment at 650° C. or higher for a time shorter than a treatment time in the first heat treatment step.

摘要翻译： 本发明提供一种半导体器件，含有单晶半导体薄膜的衬底及其制造方法，其中，通过转印到低耐热绝缘衬底上制造的包含单晶半导体薄膜的单晶半导体元件 具有增强的晶体管特性。 本发明是一种在绝缘基板上包括单晶半导体薄膜的单晶半导体元件的半导体器件的制造方法，该制造方法包括第一热处理工序和第二热处理工序的连续工序， 其中，在所述第一热处理工序中，单晶半导体薄膜在低于650℃下经受热处理，所述单晶半导体薄膜含有掺杂杂质，并且包括单晶的至少一部分 半导体元件，与绝缘基板接合的单晶半导体薄膜，在第二热处理工序中，单晶半导体薄膜在650℃以上进行比处理时间短的时间的热处理 在第一热处理步骤中。