发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US13562157申请日: 2012-07-30
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公开(公告)号: US08421527B2公开(公告)日: 2013-04-16
- 发明人: Toshio Sasaki , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
- 申请人: Toshio Sasaki , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2008-291929 20081114
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.
公开/授权文献
- US20120293247A1 Semiconductor Integrated Circuit Device 公开/授权日:2012-11-22
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