发明授权
- 专利标题： Method for producing semiconductor device and semiconductor device
- 专利标题（中）： 半导体器件和半导体器件的制造方法
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申请号： US13029866申请日： 2011-02-17
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公开(公告)号： US08426322B2公开(公告)日： 2013-04-23
- 发明人: Hironori Yamamoto , Jun Kawahara , Tomonori Sakaguchi , Yoshihiro Hayashi
- 申请人： Hironori Yamamoto , Jun Kawahara , Tomonori Sakaguchi , Yoshihiro Hayashi
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2010-033973 20100218; JP2010-283111 20101220
- 主分类号： H01L21/312
- IPC分类号： H01L21/312
摘要：
In a method for producing a semiconductor device, two or more kinds of organic siloxane compound materials each having a cyclic SiO structure as a main skeleton and having different structures are mixed and thereafter vaporized. Alternatively, those two or more kinds of organic siloxane compound materials are mixed and vaporized simultaneously to produce a vaporized gas. Then, the vaporized gas is transported to a reaction furnace together with a carrier gas. Then, in the reaction furnace, a porous insulating layer is formed by the plasma CVD method or the plasma polymerization method using the vaporized gas.
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