发明授权
- 专利标题： Compound semiconductor device and method of manufacturing the same
- 专利标题（中）： 化合物半导体器件及其制造方法
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申请号： US12034273申请日： 2008-02-20
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公开(公告)号： US08426892B2公开(公告)日： 2013-04-23
- 发明人: Kenji Imanishi , Toshihide Kikkawa
- 申请人： Kenji Imanishi , Toshihide Kikkawa
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2007-038905 20070220
- 主分类号： H01L29/267
- IPC分类号： H01L29/267 ; H01L21/338
摘要：
A compound semiconductor device has a buffer layer formed on a conductive SiC substrate, an AlxGa1-xN layer formed on the buffer layer in which an impurity for reducing carrier concentration from an unintentionally doped donor impurity is added and in which the Al composition x is 0
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