Invention Grant
US08426935B2 Electronic device, memory device, and method of fabricating the same 有权
电子装置,存储装置及其制造方法

Electronic device, memory device, and method of fabricating the same
Abstract:
Provided are an electronic device, a memory device, and a method of fabricating the devices for preventing physical distortion of functional elements from generating and improving electric contact properties between the functional elements and electric elements connecting to the functional elements. At least two grooves are formed in a substrate, and a conductive material is filled in the grooves to obtain electric elements having a surface at the same height as that of the substrate. In addition, a functional material layer (functional layer) is formed on an entire upper surface of the substrate and is patterned so as to obtain a functional element having both bottom surfaces contacting the electric elements.
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