Invention Grant
- Patent Title: Electronic device, memory device, and method of fabricating the same
- Patent Title (中): 电子装置,存储装置及其制造方法
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Application No.: US12700464Application Date: 2010-02-04
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Publication No.: US08426935B2Publication Date: 2013-04-23
- Inventor: Gyu Tae Kim , Kang Ho Lee , Hye Young Kim , Kyung Jin Lee , Woun Kang
- Applicant: Gyu Tae Kim , Kang Ho Lee , Hye Young Kim , Kyung Jin Lee , Woun Kang
- Applicant Address: KR Seoul
- Assignee: Korea University Research and Business Foundation
- Current Assignee: Korea University Research and Business Foundation
- Current Assignee Address: KR Seoul
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: KR10-2009-00103567 20091029
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/02

Abstract:
Provided are an electronic device, a memory device, and a method of fabricating the devices for preventing physical distortion of functional elements from generating and improving electric contact properties between the functional elements and electric elements connecting to the functional elements. At least two grooves are formed in a substrate, and a conductive material is filled in the grooves to obtain electric elements having a surface at the same height as that of the substrate. In addition, a functional material layer (functional layer) is formed on an entire upper surface of the substrate and is patterned so as to obtain a functional element having both bottom surfaces contacting the electric elements.
Public/Granted literature
- US20110101476A1 ELECTRONIC DEVICE, MEMORY DEVICE, AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-05-05
Information query
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