Invention Grant
- Patent Title: Self-aligned spacer multiple patterning methods
- Patent Title (中): 自对准间隔多重图案化方法
-
Application No.: US12825117Application Date: 2010-06-28
-
Publication No.: US08431329B2Publication Date: 2013-04-30
- Inventor: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
- Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent Jonathan D. Baskin
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/028 ; G03F7/40
Abstract:
Self-aligned spacer multiple patterning method are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
Public/Granted literature
- US20100330498A1 SELF-ALIGNED SPACER MULTIPLE PATTERNING METHODS Public/Granted day:2010-12-30
Information query
