- Patent Title: Solid-state imaging device and drive control method for the same
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Application No.: US12231365Application Date: 2008-09-02
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Publication No.: US08431879B2Publication Date: 2013-04-30
- Inventor: Keiji Mabuchi , Eiichi Funatsu , Masanori Kasai
- Applicant: Keiji Mabuchi , Eiichi Funatsu , Masanori Kasai
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: The Chicago Technology Law Group, LLC.
- Agent Robert J. Depke
- Priority: JP2003-113840 20030418
- Main IPC: H01L27/00
- IPC: H01L27/00

Abstract:
A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.
Public/Granted literature
- US20090072123A1 Solid-state imaging device and drive control method for the same Public/Granted day:2009-03-19
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