- 专利标题： Through-silicon via structure and a process for forming the same
- 专利标题（中）： 通硅结构及其形成方法
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申请号： US12783973申请日： 2010-05-20
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公开(公告)号： US08432038B2公开(公告)日： 2013-04-30
- 发明人: Weng-Jin Wu , Yung-Chi Lin , Wen-Chih Chiou
- 申请人： Weng-Jin Wu , Yung-Chi Lin , Wen-Chih Chiou
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A through-silicon via (TSV) structure and process for forming the same are disclosed. A semiconductor substrate has a front surface and a back surface, and a TSV structure is formed to extend through the semiconductor substrate. The TSV structure includes a metal layer, a metal seed layer surrounding the metal layer, a barrier layer surrounding the metal seed layer, and a metal silicide layer formed in a portion sandwiched between the metal layer and the metal seed layer.
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