发明授权
- 专利标题: Copper interconnect formation
- 专利标题(中): 铜互连形成
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申请号: US13151658申请日: 2011-06-02
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公开(公告)号: US08435887B2公开(公告)日: 2013-05-07
- 发明人: James J. Kelly , Takeshi Nogami , Kazumichi Tsumura
- 申请人: James J. Kelly , Takeshi Nogami , Kazumichi Tsumura
- 申请人地址: US NY Armonk JP Tokyo
- 专利权人: International Business Machines Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人: International Business Machines Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人地址: US NY Armonk JP Tokyo
- 代理商 Yuanmin Cai; Ira D. Blecker
- 主分类号: H01L21/288
- IPC分类号: H01L21/288
摘要:
Disclosed is a method which includes forming a copper interconnect within a trench or via in a substrate. Forming the copper interconnect includes forming a ruthenium-containing seed layer on a wall of the trench or via; forming a cobalt sacrificial layer on the ruthenium-containing layer before the ruthenium-containing seed layer being exposed to an environment that is oxidizing with respect to the seed layer; and contacting the cobalt sacrificial layer with a copper plating solution, the copper plating solution dissolving the cobalt sacrificial layer and plating out copper on the unoxidized ruthenium-containing seed layer. Alternatively, the ruthenium-containing seed layer may be replaced with platinum, tungsten nitride, titanium nitride or titanium or iridium. Further alternatively, the cobalt sacrificial layer may be replaced by tin, cadmium, copper or manganese.
公开/授权文献
- US20120309190A1 COPPER INTERCONNECT FORMATION 公开/授权日:2012-12-06