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    Copper interconnect formation
    1.
    发明授权
    Copper interconnect formation 失效
    铜互连形成

    公开(公告)号：US08435887B2

    公开(公告)日：2013-05-07

    申请号：US13151658

    申请日：2011-06-02

    申请人： James J. Kelly ,  Takeshi Nogami ,  Kazumichi Tsumura

    发明人： James J. Kelly ,  Takeshi Nogami ,  Kazumichi Tsumura

    IPC分类号： H01L21/288

    CPC分类号： H01L21/76861 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a method which includes forming a copper interconnect within a trench or via in a substrate. Forming the copper interconnect includes forming a ruthenium-containing seed layer on a wall of the trench or via; forming a cobalt sacrificial layer on the ruthenium-containing layer before the ruthenium-containing seed layer being exposed to an environment that is oxidizing with respect to the seed layer; and contacting the cobalt sacrificial layer with a copper plating solution, the copper plating solution dissolving the cobalt sacrificial layer and plating out copper on the unoxidized ruthenium-containing seed layer. Alternatively, the ruthenium-containing seed layer may be replaced with platinum, tungsten nitride, titanium nitride or titanium or iridium. Further alternatively, the cobalt sacrificial layer may be replaced by tin, cadmium, copper or manganese.

    摘要翻译： 公开了一种方法，其包括在衬底中的沟槽或通孔内形成铜互连。 形成铜互连包括在沟槽或通孔的壁上形成含钌种子层; 在含钌种子层暴露于相对于种子层氧化的环境之前，在含钌层上形成钴牺牲层; 并且将钴牺牲层与铜电镀溶液接触，所述铜电镀溶液溶解钴牺牲层并在未氧化的含钌种子层上电镀铜。 或者，可以用铂，氮化钨，氮化钛或钛或铱代替含钌种子层。 此外，钴牺牲层可以被锡，镉，铜或锰替代。

    COPPER INTERCONNECT FORMATION
    2.
    发明申请
    COPPER INTERCONNECT FORMATION 失效
    铜互连形成

    公开(公告)号：US20120309190A1

    公开(公告)日：2012-12-06

    申请号：US13151658

    申请日：2011-06-02

    申请人： James J. Kelly ,  Takeshi Nogami ,  Kazumichi Tsumura

    发明人： James J. Kelly ,  Takeshi Nogami ,  Kazumichi Tsumura

    IPC分类号： H01L21/288

    CPC分类号： H01L21/76861 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a method which includes forming a copper interconnect within a trench or via in a substrate. Forming the copper interconnect includes forming a ruthenium-containing seed layer on a wall of the trench or via; forming a cobalt sacrificial layer on the ruthenium-containing layer before the ruthenium-containing seed layer being exposed to an environment that is oxidizing with respect to the seed layer; and contacting the cobalt sacrificial layer with a copper plating solution, the copper plating solution dissolving the cobalt sacrificial layer and plating out copper on the unoxidized ruthenium-containing seed layer. Alternatively, the ruthenium-containing seed layer may be replaced with platinum, tungsten nitride, titanium nitride or titanium or iridium. Further alternatively, the cobalt sacrificial layer may be replaced by tin, cadmium, copper or manganese.

    摘要翻译： 公开了一种方法，其包括在衬底中的沟槽或通孔内形成铜互连。 形成铜互连包括在沟槽或通孔的壁上形成含钌种子层; 在含钌种子层暴露于相对于种子层氧化的环境之前，在含钌层上形成钴牺牲层; 并且将钴牺牲层与铜电镀溶液接触，所述铜电镀溶液溶解钴牺牲层并在未氧化的含钌种子层上电镀铜。 或者，可以用铂，氮化钨，氮化钛或钛或铱代替含钌种子层。 此外，钴牺牲层可以被锡，镉，铜或锰替代。

    INTERCONNECT STRUCTURE EMPLOYING A Mn-GROUP VIIIB ALLOY LINER
    4.
    发明申请
    INTERCONNECT STRUCTURE EMPLOYING A Mn-GROUP VIIIB ALLOY LINER 失效
    使用Mn-VIIIB合金衬里的互连结构

    公开(公告)号：US20110180309A1

    公开(公告)日：2011-07-28

    申请号：US12693637

    申请日：2010-01-26

    申请人： Daniel C. Edelstein ,  Takeshi Nogami ,  Kazumichi Tsumura ,  Takamasa Usui

    发明人： Daniel C. Edelstein ,  Takeshi Nogami ,  Kazumichi Tsumura ,  Takamasa Usui

    IPC分类号： H05K1/09 ,  H05K3/10

    CPC分类号： H01L21/76846 ,  H01L21/4814 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metallic liner stack including at least a Group VIIIB element layer and a CuMn alloy layer is deposited within a trench in a dielectric layer. Copper is deposited on the metallic liner stack and planarized to form a conductive interconnect structure, which can be a metal line, a metal via, or a combination thereof. The deposited copper and the metallic liner stack are annealed before or after planarization. The Mn atoms are gettered by the Group VIIIB element layer to form a metallic alloy liner including Mn and at least one of Group VIIIB elements. Mn within the metallic alloy liner combines with oxygen during the anneal to form MnO, which acts as a strong barrier to oxygen diffusion, thereby enhancing the reliability of the conductive interconnect structure.

    摘要翻译： 至少包括第VIIIB族元素层和CuMn合金层的金属衬垫堆积在电介质层的沟槽内。 铜沉积在金属衬垫上并被平坦化以形成导电互连结构，其可以是金属线，金属通孔或其组合。 沉积的铜和金属衬垫在平坦化之前或之后退火。 通过第VIIIB族元素层吸收Mn原子以形成包含Mn和VIIIB族元素中的至少一种的金属合金衬里。 金属合金衬里内的Mn在退火期间与氧结合形成MnO，其作为氧扩散的强势垒，从而提高导电互连结构的可靠性。

    Semiconductor device and method of manufacturing the same
    7.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07115999B2

    公开(公告)日：2006-10-03

    申请号：US10833043

    申请日：2004-04-28

    申请人： Kazumichi Tsumura ,  Hideki Shibata

    发明人： Kazumichi Tsumura ,  Hideki Shibata

    IPC分类号： H01L23/12

    CPC分类号： H01L21/743 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/485

    摘要： A semiconductor device has an active element structure formed on a semiconductor substrate. The active element has a connection region formed on a surface of the semiconductor substrate. An insulating film is formed on the semiconductor substrate. A connection hole is formed in the insulating film, and has a bottom connected with the connection region. An interconnect trench is formed in the insulating film, and has a bottom connected with the connection region. A first conductive film is filled in a first region ranging from the connection region in the connection hole to a first height, and is composed of an alloy containing CoW or NiW. A second conductive film is formed in the interconnect trench, and is electrically connected with the first conductive film.

    摘要翻译： 半导体器件具有形成在半导体衬底上的有源元件结构。 有源元件具有形成在半导体衬底的表面上的连接区域。 绝缘膜形成在半导体衬底上。 在绝缘膜上形成连接孔，并且具有与连接区域连接的底部。 在绝缘膜中形成互连沟槽，并且具有与连接区域连接的底部。 第一导电膜填充在从连接孔中的连接区域到第一高度的第一区域中，并且由包含CoW或NiW的合金构成。 第二导电膜形成在互连沟槽中，并与第一导电膜电连接。

    Semiconductor device and manufacturing method thereof
    8.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08377822B2

    公开(公告)日：2013-02-19

    申请号：US12784868

    申请日：2010-05-21

    申请人： Kazumichi Tsumura ,  Takamasa Usui

    发明人： Kazumichi Tsumura ,  Takamasa Usui

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： H01L23/53238 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure having a cap layer formed over a metalized dielectric layer is formed by depositing manganese on the surface of the metalized dielectric layer. The deposited manganese serves as a first cap layer to remove oxidation on the surface of the metalized dielectric layer. The presence of oxidation on the surface of the metalized dielectric layer can be delirious for performance of a device constructed out of the semiconductor structure. A second cap layer is then formed by depositing silicon carbide or nitrogen enriched silicon carbide over the first cap layer.

    摘要翻译： 通过在金属化介电层的表面上沉积锰来形成具有形成在金属化电介质层上的盖层的半导体结构。 沉积的锰用作第一盖层以去除金属化介电层的表面上的氧化。 金属化介电层的表面上的氧化的存在对于由半导体结构构成的器件的性能可能是恶劣的。 然后通过在第一盖层上沉积碳化硅或富氮碳化硅来形成第二盖层。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20110285024A1

    公开(公告)日：2011-11-24

    申请号：US12784868

    申请日：2010-05-21

    申请人： Kazumichi Tsumura ,  Takamasa Usui

    发明人： Kazumichi Tsumura ,  Takamasa Usui

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： H01L23/53238 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure having a cap layer formed over a metalized dielectric layer is formed by depositing manganese on the surface of the metalized dielectric layer. The deposited manganese serves as a first cap layer to remove oxidation on the surface of the metalized dielectric layer. The presence of oxidation on the surface of the metalized dielectric layer can be delirious for performance of a device constructed out of the semiconductor structure. A second cap layer is then formed by depositing silicon carbide or nitrogen enriched silicon carbide over the first cap layer.

    摘要翻译： 通过在金属化介电层的表面上沉积锰来形成具有形成在金属化电介质层上的盖层的半导体结构。 沉积的锰用作第一盖层以去除金属化介电层的表面上的氧化。 金属化介电层的表面上的氧化的存在对于由半导体结构构成的器件的性能可能是恶劣的。 然后通过在第一盖层上沉积碳化硅或富氮碳化硅来形成第二盖层。

    Capacitor of dynamic random access memory and method of manufacturing the capacitor
    10.
    发明申请
    Capacitor of dynamic random access memory and method of manufacturing the capacitor 失效
    动态随机存取存储器的电容器和制造电容器的方法

    公开(公告)号：US20070170483A1

    公开(公告)日：2007-07-26

    申请号：US11432660

    申请日：2006-05-12

    申请人： Yumi Hayashi ,  Hayato Nasu ,  Kazumichi Tsumura ,  Takamasa Usui ,  Hiroyoshi Tanimoto

    发明人： Yumi Hayashi ,  Hayato Nasu ,  Kazumichi Tsumura ,  Takamasa Usui ,  Hiroyoshi Tanimoto

    IPC分类号： H01L29/94

    CPC分类号： H01L29/945 ,  H01L27/10852 ,  H01L27/1087 ,  H01L28/40 ,  H01L29/66181

    摘要： A transistor formed on a semiconductor substrate has a gate electrode formed via a gate insulating film and first and second diffusion layers formed in the semiconductor substrate, the first and second diffusion layers being positioned at both sides of the gate electrode. A first electrode is connected to the first diffusion layer of the transistor. A capacitor insulating film formed on the first electrode is formed of a silicon oxide film containing a substrate which is faster than Cu in diffusion velocity and which more readily reacts with oxygen than Cu does. A second electrode formed on the capacitor insulating film is formed of one of a Cu layer and another Cu layer containing the substance.

    摘要翻译： 形成在半导体衬底上的晶体管具有通过栅极绝缘膜形成的栅电极和形成在半导体衬底中的第一和第二扩散层，第一和第二扩散层位于栅电极的两侧。 第一电极连接到晶体管的第一扩散层。 形成在第一电极上的电容器绝缘膜由包含衬底的氧化硅膜形成，该衬底的扩散速度比Cu快，并且比Cu更容易与氧反应。 形成在电容器绝缘膜上的第二电极由Cu层和含有该物质的另一Cu层中的一个形成。