发明授权
- 专利标题： First inter-layer dielectric stack for non-volatile memory
- 专利标题（中）： 用于非易失性存储器的第一层间介质叠层
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申请号： US11697106申请日： 2007-04-05
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公开(公告)号： US08435898B2公开(公告)日： 2013-05-07
- 发明人: Olubunmi O. Adetutu , Christopher B. Hundley , Paul A. Ingersoll , Craig T. Swift
- 申请人： Olubunmi O. Adetutu , Christopher B. Hundley , Paul A. Ingersoll , Craig T. Swift
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Hamilton & Terrile, LLP
- 代理商 Michael Rocco Cannatti
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method and apparatus are described for forming a first inter-layer dielectric (ILD0) stack having a protective gettering layer (72) with a substantially uniform thickness. After forming device components (32, 33) on a substrate (31), a gap fill dielectric layer of SATEOS (52) is deposited over an etch stop layer of PEN ESL (42) and then planarized before sequentially depositing a gettering layer of BPTEOS (72) and capping dielectric layer (82) on the planarized gap fill dielectric layer (52). Once the ILD0 stack is formed, one or more contact openings (92, 94, 96) are etched through the ILD0 stack, thereby exposing the etch stop layer (42) over the intended contact regions.
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