发明授权
- 专利标题： Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
- 专利标题（中）： 包含发射辐射的GaN系外延层序列的发光二极管芯片及其制造方法
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申请号： US13079235申请日： 2011-04-04
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公开(公告)号： US08436393B2公开(公告)日： 2013-05-07
- 发明人: Berthold Hahn , Ulrich Jacob , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow
- 申请人： Berthold Hahn , Ulrich Jacob , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow
- 申请人地址： DE Munich
- 专利权人： Osram GmbH
- 当前专利权人： Osram GmbH
- 当前专利权人地址： DE Munich
- 代理机构： Fish & Richardson P.C.
- 优先权： DE10026254 20000526
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
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