发明授权
- 专利标题： Backside depletion for backside illuminated image sensors
- 专利标题（中）： 背面照明图像传感器的背面耗尽
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申请号： US12107199申请日： 2008-04-22
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公开(公告)号： US08436443B2公开(公告)日： 2013-05-07
- 发明人: Tzu-Hsuan Hsu , Han-Chi Liu , Ching-Chun Wang
- 申请人： Tzu-Hsuan Hsu , Han-Chi Liu , Ching-Chun Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L31/09
摘要：
A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.
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