公开(公告)号：US08436443B2

公开(公告)日：2013-05-07

申请号：US12107199

申请日：2008-04-22

申请人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

IPC分类号： H01L27/146 ,  H01L31/09

CPC分类号： H01L31/0232 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

摘要： A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

摘要翻译： 提供了背面照明图像传感器，其包括具有前侧和后侧的基板，形成在前侧的基板中的传感器，所述传感器至少包括光电二极管，以及在背面形成在基板中的耗尽区域， 耗尽区的深度小于衬底厚度的20％。

公开(公告)号：US20080224247A1

公开(公告)日：2008-09-18

申请号：US12107199

申请日：2008-04-22

申请人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/0232 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

摘要： A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

摘要翻译： 提供了背面照明图像传感器，其包括具有前侧和后侧的基板，形成在前侧的基板中的传感器，所述传感器至少包括光电二极管，以及在背面形成在基板中的耗尽区域， 耗尽区的深度小于衬底厚度的20％。

公开(公告)号：US07923279B2

公开(公告)日：2011-04-12

申请号：US12405454

申请日：2009-03-17

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

公开(公告)号：US07824948B2

公开(公告)日：2010-11-02

申请号：US12357223

申请日：2009-01-21

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC分类号： H01L27/14 ,  H01L33/00

CPC分类号： H01L21/26513 ,  H01L21/761 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

公开(公告)号：US20100181634A1

公开(公告)日：2010-07-22

申请号：US12357223

申请日：2009-01-21

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC分类号： H01L31/02 ,  H01L21/762 ,  H01L31/18

CPC分类号： H01L21/26513 ,  H01L21/761 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

公开(公告)号：US20100181635A1

公开(公告)日：2010-07-22

申请号：US12405454

申请日：2009-03-17

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC分类号： H01L31/04 ,  H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

公开(公告)号：US08912619B2

公开(公告)日：2014-12-16

申请号：US13907437

申请日：2013-05-31

申请人： Han-Chi Liu ,  Huan-Kun Pan ,  Eiichi Okamoto

发明人： Han-Chi Liu ,  Huan-Kun Pan ,  Eiichi Okamoto

IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L31/0248

CPC分类号： H01L31/0248 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/50

摘要： The present invention provides an ultra-violet light sensing device. The ultra-violet light sensing device includes a first conductivity type substrate, a second conductivity type region, and a first conductivity type high density region. The first conductivity type substrate includes a light incident surface. The second conductivity type region is disposed in the first conductivity type substrate and adjacent to the light incident surface. The first conductivity type high density region is disposed under the second conductivity type region. The present invention also provides another ultra-violet light sensing device, which further includes a first conductivity type high density shallow region which is sandwiched between the light incident surface and the second conductivity type region. Manufacturing methods for these ultra-violet light sensing devices are also disclosed in the present invention.

摘要翻译： 本发明提供一种紫外线感测装置。 紫外线感测装置包括第一导电型基板，第二导电型区域和第一导电型高密度区域。 第一导电型基板包括光入射面。 第二导电类型区域设置在第一导电类型基板中并与光入射表面相邻。 第一导电型高密度区域设置在第二导电类型区域的下方。 本发明还提供另一种紫外线感测装置，其还包括夹在光入射表面和第二导电类型区域之间的第一导电类型的高密度浅区域。 本发明还公开了这些紫外线感测装置的制造方法。

公开(公告)号：US08368130B2

公开(公告)日：2013-02-05

申请号：US12968047

申请日：2010-12-14

申请人： Chun-Yao Ko ,  Chung-Wei Chang ,  Han-Chi Liu ,  Shou-Gwo Wuu

发明人： Chun-Yao Ko ,  Chung-Wei Chang ,  Han-Chi Liu ,  Shou-Gwo Wuu

IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/0352

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.

摘要翻译： 制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。 在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行 仅在逻辑区域中进行第三次植入过程。

公开(公告)号：US20120200861A1

公开(公告)日：2012-08-09

申请号：US13445639

申请日：2012-04-12

申请人： Hui-Hsuan Chen ,  Hsin-Chia Chen ,  Han-Chi Liu ,  Ching-Lin Chung ,  Yen-Min Chang

发明人： Hui-Hsuan Chen ,  Hsin-Chia Chen ,  Han-Chi Liu ,  Ching-Lin Chung ,  Yen-Min Chang

IPC分类号： G01B11/14

CPC分类号： G01B11/002 ,  G01S7/4815 ,  G01S17/58 ,  G06F3/0317 ,  G06F3/0354 ,  G06F3/03543

摘要： The present invention discloses an optical displacement detection apparatus and an optical displacement detection method. The optical displacement detection apparatus comprises: at least two light sources for projecting light of different spectrums to a surface under detection, respectively; an image capturing device for receiving light reflected from the surface under detection and converting it into electronic signals; and a processing control circuit for calculating displacement according to the electronic signals from the image capturing device, wherein the processing control circuit is capable of switching between the light sources.

摘要翻译： 本发明公开了一种光学位移检测装置和光学位移检测方法。 光学位移检测装置包括：至少两个光源，用于将不同光谱的光分别投射到被检测的表面; 用于接收从被检测表面反射的光并将其转换为电子信号的图像捕获装置; 以及处理控制电路，用于根据来自图像捕获装置的电子信号计算位移，其中处理控制电路能够在光源之间切换。

公开(公告)号：US20110134078A1

公开(公告)日：2011-06-09

申请号：US12817172

申请日：2010-06-16

申请人： En-Feng Hsu ,  Han-Chi Liu ,  Chih-Hung Lu ,  Ming-Tsan Kao

发明人： En-Feng Hsu ,  Han-Chi Liu ,  Chih-Hung Lu ,  Ming-Tsan Kao

IPC分类号： G06F3/042 ,  G01C3/08 ,  H04N13/02

CPC分类号： G01C3/08 ,  G01S7/491 ,  G01S7/497 ,  G01S17/08 ,  G06F3/0428 ,  H04N13/254

摘要： A distance-measuring device includes a light-emitting/sensing controlling circuit, a light-emitting component, a light-sensing group, a background-calculating circuit, a frequency-adjusting circuit, and a distance-calculating circuit. The light-emitting component emits a detecting light to a measured object. The light-emitting/sensing controlling circuit controls the light-sensing group receiving and accumulating the energy of a reflective light generated by the measured object reflecting the detecting light, so that the distance-calculating circuit can calculate a measured distance between the measured object and the distance-measuring device according the accumulated energy of the light-sensing group. In addition, the distance-measuring device calculates the energy accumulated by the light-sensing group sensing the background light per unit time, by means of the background-calculating circuit. In this way, the effect of the background light is reduced so that the distance-measuring device can more correctly calculate the measured distance.

摘要翻译： 测距装置包括发光/感测控制电路，发光组件，感光组，背景计算电路，频率调节电路和距离计算电路。 发光部件向测量对象发射检测光。 发光/感测控制电路控制感光组接收并累积反射检测光的测量对象产生的反射光的能量，使得距离计算电路可以计算测量对象和 所述距离测量装置根据所述感光组的累积能量。 此外，距离测量装置通过背景计算电路来计算感测每单位时间的背景光的感光组所累积的能量。 以这种方式，减轻了背景光的影响，使得距离测量装置可以更准确地计算测量的距离。