Invention Grant
- Patent Title: Backside depletion for backside illuminated image sensors
- Patent Title (中): 背面照明图像传感器的背面耗尽
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Application No.: US12107199Application Date: 2008-04-22
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Publication No.: US08436443B2Publication Date: 2013-05-07
- Inventor: Tzu-Hsuan Hsu , Han-Chi Liu , Ching-Chun Wang
- Applicant: Tzu-Hsuan Hsu , Han-Chi Liu , Ching-Chun Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/09
Abstract:
A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.
Public/Granted literature
- US20080224247A1 BACKSIDE DEPLETION FOR BACKSIDE ILLUMINATED IMAGE SENSORS Public/Granted day:2008-09-18
Information query
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