发明授权
- 专利标题： Semiconductor device and fabricating method thereof
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US12701615申请日： 2010-02-08
-
公开(公告)号： US08444793B2公开(公告)日： 2013-05-21
- 发明人: Hsin-Chang Hsiung , Shu-Lin Ho
- 申请人： Hsin-Chang Hsiung , Shu-Lin Ho
- 申请人地址： TW Fonghua Village, Xinshi Dist., Tainan TW Pusin Village, Pusin, Dayuan Township, Taoyuan County
- 专利权人： Himax Semiconductor, Inc.,Core Precision Material Co., Ltd.
- 当前专利权人： Himax Semiconductor, Inc.,Core Precision Material Co., Ltd.
- 当前专利权人地址： TW Fonghua Village, Xinshi Dist., Tainan TW Pusin Village, Pusin, Dayuan Township, Taoyuan County
- 代理商 Winston Hsu; Scott Margo
- 主分类号： B29C73/04
- IPC分类号： B29C73/04 ; B29C65/54 ; B29C63/22 ; B32B37/06 ; B32B37/12 ; B32B38/10 ; B32B43/00 ; C08J5/12
摘要：
The present invention provides a semiconductor device and a fabricating method thereof. The fabricating method comprises: providing a first substrate; forming a soft dry film having an adhesive film and a release film; sticking the soft dry film on the first substrate with the adhesive film; removing the release film; sticking a second substrate on the adhesive film; and heating the adhesive film to solidify the adhesive film to form a solid adhesive film. The semiconductor device comprises: a first substrate, a solid adhesive film, and a second substrate. The solid adhesive film is formed on the first substrate, and the second substrate is formed on the solid adhesive film.
公开/授权文献
- US20110195257A1 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF 公开/授权日：2011-08-11
信息查询
