Invention Grant
US08445166B2 Fabrication method of lithography mask and formation method of fine pattern using the same
有权
光刻掩模的制作方法和使用其的精细图案的形成方法
- Patent Title: Fabrication method of lithography mask and formation method of fine pattern using the same
- Patent Title (中): 光刻掩模的制作方法和使用其的精细图案的形成方法
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Application No.: US12333566Application Date: 2008-12-12
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Publication No.: US08445166B2Publication Date: 2013-05-21
- Inventor: Ho Young Song , Dong You Kim , Won Ho Jung , Young Jin Cho , Young Chun Kim
- Applicant: Ho Young Song , Dong You Kim , Won Ho Jung , Young Jin Cho , Young Chun Kim
- Applicant Address: KR Seoul
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2008-0069184 20080716
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F1/08 ; G03F7/00

Abstract:
There is provided a method of fabricating a lithography mask, the method including: forming a transparent polymer layer on a surface of a first substrate where a convex-concave pattern is formed; separating the transparent polymer layer from the first substrate, the transparent polymer layer having a convex-concave surface formed by the convex-concave pattern of the first substrate transferred thereonto; depositing a metal thin film on the convex-concave surface; forming a viscous film on a second substrate; disposing the transparent polymer layer on the second substrate such that the viscous film and metal thin film are partially bonded together; and separating the transparent polymer layer from the second substrate such that a portion of the metal thin film bonded to the viscous film is removed, wherein a metal thin film pattern having the portion of the metal thin film removed therefrom is formed on the convex-concave surface.
Public/Granted literature
- US20100015535A1 FABRICATION METHOD OF LITHOGRAPHY MASK AND FORMATION METHOD OF FINE PATTERN USING THE SAME Public/Granted day:2010-01-21
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