发明授权
- 专利标题: Method of manufacturing a semiconductor laser
- 专利标题(中): 制造半导体激光器的方法
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申请号: US13527188申请日: 2012-06-19
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公开(公告)号: US08450130B2公开(公告)日: 2013-05-28
- 发明人: Kentaro Tada , Kenji Endo , Kazuo Fukagai , Tetsuro Okuda , Masahide Kobayashi
- 申请人: Kentaro Tada , Kenji Endo , Kazuo Fukagai , Tetsuro Okuda , Masahide Kobayashi
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Young & Thompson
- 优先权: JP2009-046074 20090227
- 主分类号: H01L21/223
- IPC分类号: H01L21/223 ; H01L21/225
摘要:
Provided is a semiconductor laser, wherein (λa−λw)>15 (nm) and Lt
公开/授权文献
- US20120258558A1 METHOD OF MANUFACTURING A SEMICONDUCTOR LASER 公开/授权日:2012-10-11
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