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    Window type semiconductor laser light emitting device and a process of fabricating thereof
    3.
    发明授权
    Window type semiconductor laser light emitting device and a process of fabricating thereof 失效
    窗型半导体激光发光器件及其制造方法

    公开(公告)号：US06385225B1

    公开(公告)日：2002-05-07

    申请号：US09567080

    申请日：2000-05-08

    申请人： Kazuo Fukagai

    发明人： Kazuo Fukagai

    IPC分类号： H01S500

    CPC分类号： H01S5/16 ,  H01S5/168

    摘要： A window type semiconductor layer light emitting device has a compound semiconductor structure including a first clad layer formed on a crystal plane closer to (100) plane, an active layer formed on the first clad layer and a second clad layer formed on the active layer and window layers grown on both sides of the compound semiconductor structure, and the buried window layers are epitaxially grown on the side surfaces of the compound semiconductor structure by restricting the epitaxial growth in a vertical direction to the crystal lane so that the upper surfaces of the buried window layers are substantially coplanar with the upper surface of the second clad layer, thereby decreasing the coupling loss.

    摘要翻译： 窗型半导体层发光器件具有化合物半导体结构，其包括形成在更靠近（100）面的晶面上的第一覆盖层，形成在第一覆盖层上的有源层和形成在有源层上的第二覆盖层， 在化合物半导体结构的两侧生长的窗口层，并且通过限制在晶体通道的垂直方向上的外延生长，使掩埋窗口层在化合物半导体结构的侧表面外延生长，使得掩埋 窗口层与第二覆盖层的上表面基本共面，从而减小耦合损耗。

    Fabrication method of semiconductor laser by MOVPE
    5.
    发明授权
    Fabrication method of semiconductor laser by MOVPE 失效
    通过MOVPE制作半导体激光器的方法

    公开(公告)号：US5762705A

    公开(公告)日：1998-06-09

    申请号：US282457

    申请日：1994-07-29

    申请人： Kazuo Fukagai ,  Shin Ishikawa

    发明人： Kazuo Fukagai ,  Shin Ishikawa

    IPC分类号： H01L21/205 ,  C30B25/02 ,  H01S5/00 ,  H01S5/343

    CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/40 ,  H01S5/34313 ,  H01S2304/04

    摘要： A fabrication method of a semiconductor QW laser by MOVPE with a high fabrication yield, providing a laser device sufficiently reliable in operation over long period of time and applicable for optical communications. An InGaAs QW active layer is grown on a first semiconductor layer formed on or over a semiconductor substrate at a growth temperature ranging from 580.degree. to 640.degree. C. Then, a second semiconductor layer is grown on the active layer at the same growth temperature as that of the active layer. Preferably, the active layer is grown under a condition that the total pressure in a growth chamber is substantially equal to an atmospheric pressure and a partial pressure of arsine (AsH.sub.3) for As component ranges from 1.6.times.10.sup.-7 to 3.times.10.sup.-1 Torr.

    摘要翻译： 一种通过MOVPE制造的半导体QW激光器的制造方法，其制造成品率高，提供了在长时间内可操作地适用于光通信的激光装置。 在580℃至640℃的生长温度下，在形成于半导体衬底上或第二半导体衬底上的第一半导体层上生长InGaAs QW有源层。然后，在活性层上以与生长温度相同的生长温度生长第二半导体层， 活动层的。 优选地，活性层在生长室中的总压力基本上等于大气压并且As成分的胂（AsH 3）的分压为1.6×10 -7至3×10 -1乇的条件下生长。

    Strained layer InGaAs quantum well semiconductor laser on GaAs substrate with quantum well-barrier layer interface structure
    6.
    发明授权
    Strained layer InGaAs quantum well semiconductor laser on GaAs substrate with quantum well-barrier layer interface structure 失效
    应变层InGaAs量子阱半导体激光器在GaAs衬底上具有量子阱屏障层界面结构

    公开(公告)号：US5530713A

    公开(公告)日：1996-06-25

    申请号：US410304

    申请日：1995-03-24

    申请人： Kazuo Fukagai

    发明人： Kazuo Fukagai

    IPC分类号： H01S5/00 ,  H01L29/04 ,  H01S5/02 ,  H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

    CPC分类号： B82Y20/00 ,  H01L29/045 ,  H01S5/34 ,  H01S5/34313 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3407

    摘要： A semiconductor double heterostructure formed on a GaAs substrate having an off (100) plane slightly tilted toward a predetermined direction, the double heterostructure including an InGaAs quantum well active strained layer sandwiched between potential barrier layers and including an interface between the InGaAs quantum well active strained layer and an upper potential barrier layer grown on the active strained layer, wherein the interface has a periodical ridge-like bunching structure comprising quadrilateral waveform parts and triangular waveform parts, each of the quadrilateral waveform parts comprises a series of a bottom terrace of the just (100) plane, a reverse direction multiple step plane largely tilted from (100) direction toward the opposite direction to the predetermined direction, a top terrace of the just (100) plane and a forward direction multiple step plane largely tilted from (100) direction toward the predetermined direction, each of the triangular waveform parts comprises the just (100) plane terrace and the forward direction multiple step plane largely tilted from (100) direction toward the predetermined direction.

    摘要翻译： 在GaAs衬底上形成的半导体双异质结构，其具有朝向预定方向稍微倾斜的截止（100）面，所述双异质结构包括夹在势垒层之间的包括InGaAs量子阱活性应变的InGaAs量子阱有源应变层 层和在有源应变层上生长的上电势势垒层，其中界面具有包括四边形波形部分和三角波形部分的周期性的脊状聚束结构，每个四边形波形部分包括一系列刚好的底部平台 （100）面，从（100）方向向与所述规定方向相反的方向大体倾斜的反方向多台阶平面，刚好（100）面的顶部台面和从（100）大大倾斜的向前方向的多个台阶面， 朝向预定方向的方向，每个三角波形部分com （100）平面平台和向前方向多台阶平面大体上从（100）方向向预定方向倾斜。