- 专利标题: Power management systems with charge pumps
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申请号: US12336783申请日: 2008-12-17
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公开(公告)号: US08450977B2公开(公告)日: 2013-05-28
- 发明人: Marian Niculae , Alexandru Hartular , Dan Simion , Guoying Yi
- 申请人: Marian Niculae , Alexandru Hartular , Dan Simion , Guoying Yi
- 申请人地址: US CA Santa Clara
- 专利权人: O2Micro, Inc.
- 当前专利权人: O2Micro, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H02J7/00
- IPC分类号: H02J7/00
摘要:
A driving circuit for an N-channel Metal Oxide Semiconductor (NMOS) transistor can include a charge pump unit and a driver coupled to the charge pump. The charge pump can receive a source voltage and output an output voltage higher than the source voltage, where the source voltage is applied to a source terminal of the NMOS transistor. The driver receives the output voltage of the charge pump unit and converts the output voltage to a driving voltage operable for conducting the NMOS transistor.
公开/授权文献
- US20090160500A1 POWER MANAGEMENT SYSTEMS WITH CHARGE PUMPS 公开/授权日:2009-06-25
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