Invention Grant
- Patent Title: Millimeter-wave wideband frequency doubler
- Patent Title (中): 毫米波宽带倍频器
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Application No.: US12967160Application Date: 2010-12-14
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Publication No.: US08451033B2Publication Date: 2013-05-28
- Inventor: Po-Yi Wu , Hsieh-Hung Hsieh , Ho-Hsiang Chen , Tzu-Jin Yeh , Chewn-Pu Jou , Fu-Lung Hsueh
- Applicant: Po-Yi Wu , Hsieh-Hung Hsieh , Ho-Hsiang Chen , Tzu-Jin Yeh , Chewn-Pu Jou , Fu-Lung Hsueh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H03B19/00
- IPC: H03B19/00

Abstract:
A millimeter-wave wideband frequency doubler stage for use in a distributed frequency doubler includes: a differential input pair of transistors, each transistor having respective gate, drain and source terminals, wherein the source terminals are coupled together to a first power supply node and the drain terminals are coupled together at a first node to a second power supply node; first and second pairs of bandpass gate lines coupled to the gate terminals of the transistors; and a pair of bandpass drain lines coupled to the drain terminals of the transistors.
Public/Granted literature
- US20120146747A1 MILLIMETER-WAVE WIDEBAND FREQUENCY DOUBLER Public/Granted day:2012-06-14
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