Invention Grant
- Patent Title: Methods utilizing microwave radiation during formation of semiconductor constructions
- Patent Title (中): 在半导体结构形成期间利用微波辐射的方法
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Application No.: US13608992Application Date: 2012-09-10
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Publication No.: US08455299B2Publication Date: 2013-06-04
- Inventor: John Smythe , Bhaskar Srinivasan , Ming Zhang
- Applicant: John Smythe , Bhaskar Srinivasan , Ming Zhang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/06
- IPC: H01L21/06 ; H01L21/336 ; H01L21/00
Abstract:
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
Public/Granted literature
- US20130005080A1 Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions Public/Granted day:2013-01-03
Information query
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